SEMICONDUCTOR DEVICE

• US 20200135668A1
• Filed: 09/20/2019
• Published: 04/30/2020
• Est. Priority Date: 10/24/2018
• Status: Active Application

• Current Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Original Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Inventors: IWASAKI, Yoshinori
• Application Number:
  US16/577,963
• Publication Number:
  US 20200135668A1
• Time in Patent Office: Days
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/49844 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/50 for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 23/5385 Assembly of a plurality of insulating substrates
• CPC Class Codes: H01L 23/642 Capacitive arrangements H01L23/49589, H01L23/645, H01L23/647, H01L23/66 take precedence; capacitive effects between wiring layers on the semiconductor body H01L23/5222
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 28/20 Resistors
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 2924/19105 in a side-by-side arrangement on a common die mounting substrate

Abstract

This semiconductor device includes: a circuit substrate; a printed substrate disposed so as to face the circuit substrate; switching elements attached to the circuit substrate; a circuit impedance reduction element attached to the printed substrate; a first conductive post; a second conductive post; a first external connection terminal; and a second external connection terminal. The switching elements collectively have a first electrode and a second electrode. The circuit impedance reduction element includes a third electrode and a fourth electrode. A length of a current path between the first external connection terminal and the third electrode is shorter than a length of a current path between the first external connection terminal and the first electrode. A length of a current path between the second external connection terminal and the fourth electrode is shorter than a length of a current path between the second external connection terminal and the second electrode.

Claims

1. A semiconductor device, comprising:

a circuit substrate;

a printed substrate disposed above the circuit substrate so as to face the circuit substrate;

switching elements attached to the circuit substrate, collectively having a first electrode as a positive-side electrode and a second electrode as a negative-side electrode;

a circuit impedance reduction element attached to the printed substrate;

a first conductive post electrically and mechanically connected to the circuit substrate and the printed substrate;

a second conductive post disposed in a position separated from the first conductive post and electrically and mechanically connected to the circuit substrate and the printed substrate;

a first external connection terminal going through the printed substrate and mechanically connected to the circuit substrate, and electrically connected to the first electrode; and

a second external connection terminal going through the printed substrate and mechanically connected to the circuit substrate, and electrically connected to the second electrode,

wherein the circuit impedance reduction element includes;

a third electrode electrically connected to the first external connection terminal via the first conductive post; and

a fourth electrode electrically connected to the second external connection terminal via the second conductive post,

wherein a length of a current path between the first external connection terminal and the third electrode is shorter than a length of a current path between the first external connection terminal and the first electrode, and

wherein a length of a current path between the second external connection terminal and the fourth electrode is shorter than a length of a current path between the second external connection terminal and the second electrode.

2. The semiconductor device according to claim 1, further comprising:

a third conductive post electrically and mechanically connected to the second electrode and the printed substrate,

wherein the fourth electrode is electrically connected to the third conductive post.

3. The semiconductor device according to claim 1, wherein the circuit substrate includes:

a first circuit plate; and

a second circuit plate provided in a position separated, in a plan view, from the first circuit plate,

wherein the first external connection terminal and the first conductive post are electrically connected via the first circuit plate, and

wherein the second conductive post and the second external connection terminal are electrically connected via the second circuit plate.

4. The semiconductor device according to claim 1, wherein the printed substrate comprises:

a first conductive layer electrically and mechanically connected to the first conductive post; and

a second conductive layer provided in a position separated, in a plan view, from the first conductive layer and electrically and mechanically connected to the second conductive post,

wherein the third electrode is electrically and mechanically connected to the first conductive layer, and

wherein the fourth electrode is electrically and mechanically connected to the second conductive layer.

5. The semiconductor device according to claim 1, further comprising:

an insulating resin covering and sealing at least a portion of the circuit substrate, and covering and sealing the switching elements, the printed substrate, the circuit impedance reduction element, the first conductive post, and the second conductive post,

wherein the first external connection terminal and the second external connection terminal protrude from the insulating resin.

6. The semiconductor device according to claim 1, wherein the switching elements includes:

a first switching element; and

a second switching element connected in series to the first switching element.

7. The semiconductor device according to claim 6,

wherein the first switching element includes a source electrode and a gate electrode on a front surface, and includes a drain electrode on a rear surface,

wherein the second switching element includes a source electrode and a gate electrode on a front surface, and includes a drain electrode on a rear surface,

wherein the source electrode of the first switching element and the drain electrode of the second switching element are electrically connected to each other, and

wherein the drain electrode of the first switching element is the first electrode, and the source electrode of the second switching element is the second electrode.

8. The semiconductor device according to claim 1, wherein the circuit impedance reduction element includes a capacitor.

9. The semiconductor device according to claim 8, wherein the circuit impedance reduction element further includes a resistor element connected in series to the capacitor.

10. The semiconductor device according to claim 1, wherein the circuit impedance reduction element is disposed in a vicinity of an outer edge part of the printed substrate.

11. The semiconductor device according to claim 1,

wherein a through-hole to accommodate the circuit impedance reduction element is provided in the printed substrate, and

wherein the circuit impedance reduction element is fitted in the through-hole.

12. The semiconductor device according to claim 1, wherein the first conductive post is disposed in the printed substrate, in a plan view, between the circuit impedance reduction element and the first external connection terminal.

13. The semiconductor device according to claim 1, wherein the second conductive post is disposed, in a plan view, between the circuit impedance reduction element and the second external connection terminal.

14. The semiconductor device according to claim 12, wherein the second conductive post is disposed, in a plan view, between the circuit impedance reduction element and the second external connection terminal.

15. The semiconductor device according to claim 1,

wherein in a plan view, a pair of the first external connection terminal and the second external connection terminal is disposed adjacent to and along an elongated side of the circuit substrate, and in the plan view, the circuit impedance reduction element is disposed between the pair of the first external connection element and the second external connection element, and

wherein another pair of the first external connection terminal and the second external connection terminal is provided adjacent to and along another elongated side of the circuit substrate that is opposite to said elongated side in the plan view, and another circuit impedance reduction element is provided between said another pair of the first external connection element and the second external connection element so that said pair of the first and second external connection terminals with said circuit impedance reduction element and said another pair of the first and second external connection terminals with said another circuit impedance reduction element are arranged in a symmetrical manner with respect to a center line of the circuit substrate that is parallel to said elongated side and said another elongated side of the circuit substrate.