SEMICONDUCTOR PACKAGE DEVICE AND METHOD OF MANUFACTURING THE SAME
First Claim
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1. A semiconductor packaging device, comprising:
- a first conductive structure having a tapered portion;
a second conductive structure surrounding the tapered portion of the first conductive structure and being in direct contact with a side wall of the tapered portion of the first conductive structure; and
a dielectric layer surrounding the tapered portion of the first conductive structure and being in direct contact with the side wall of the tapered portion of the first conductive structure,wherein the second conductive structure comprises a first conductive portion and a second conductive portion, the first conductive portion being surrounded by the dielectric layer and the second conductive portion protruding from the first conductive portion and beyond a first surface of the dielectric layer, andwherein the first conductive structure comprises a barrier layer extended from the tapered portion to a second surface of the dielectric layer opposite to the first surface of the dielectric layer, and the barrier layer contacts the dielectric layer.
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Abstract
A semiconductor package device includes a first conductive structure, a second conductive structure and a dielectric layer. The first conductive structure has a tapered portion. The second conductive structure surrounds the tapered portion of the first conductive structure and is in direct contact with a side wall of the tapered portion of the first conductive structure. The dielectric layer surrounds the tapered portion of the first conductive structure and is in direct contact with the side wall of the tapered portion of the first conductive structure.
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Citations
20 Claims
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1. A semiconductor packaging device, comprising:
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a first conductive structure having a tapered portion; a second conductive structure surrounding the tapered portion of the first conductive structure and being in direct contact with a side wall of the tapered portion of the first conductive structure; and a dielectric layer surrounding the tapered portion of the first conductive structure and being in direct contact with the side wall of the tapered portion of the first conductive structure, wherein the second conductive structure comprises a first conductive portion and a second conductive portion, the first conductive portion being surrounded by the dielectric layer and the second conductive portion protruding from the first conductive portion and beyond a first surface of the dielectric layer, and wherein the first conductive structure comprises a barrier layer extended from the tapered portion to a second surface of the dielectric layer opposite to the first surface of the dielectric layer, and the barrier layer contacts the dielectric layer. - View Dependent Claims (6, 7, 8, 9, 10)
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- 2. (canceled)
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5. (canceled)
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11. A semiconductor packaging device, comprising:
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a first conductive structure having a first portion; a second conductive structure having a first portion engaged with the first portion of the first conductive structure; and a dielectric layer having a first portion engaged with the first portion of the second conductive structure, wherein the second conductive structure comprises a second portion protruding from the first portion of the second conductive structure and beyond a first surface of the dielectric layer, and wherein the first portion of the second conductive structure and the second portion of the second conductive structure form a neck, and wherein the first conductive structure comprises a barrier layer extended from the first portion to a second surface of the dielectric layer opposite to the first surface of the dielectric layer, and the barrier layer contacts the dielectric layer, wherein the second conductive structure comprises a second portion protruding from the first portion of the second conductive structure and beyond a first surface of the dielectric layer, and wherein the first portion of the second conductive structure and the second portion of the second conductive structure form a neck, and wherein the first conductive structure comprises a barrier layer extended from the first portion to a second surface of the dielectric layer opposite to the first surface of the dielectric layer, and the barrier layer contacts the dielectric layer. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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12-13. -13. (canceled)
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20. A method of forming the semiconductor packaging device, comprising:
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providing a metal plate; forming a dielectric layer on the metal plate, and patterning the dielectric layer to form one or more openings to expose a portion of the metal plate, the one or more openings having tapered sidewalls and arc-shaped corners at a bottom of the one or more openings; forming dome-shaped metal films at the bottom of the one or more openings; forming a first conductive structure extending from the bottom of the one or more openings to a top surface of the dielectric layer; removing the metal plate and the dome-shaped metal films to define a receiving space; and forming a second conductive structure at the receiving space.
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Specification