Metal-Bump Sidewall Protection

• US 20200135677A1
• Filed: 10/31/2018
• Published: 04/30/2020
• Est. Priority Date: 10/31/2018
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chang, Jung-Hua, He, Jian-Yang, Kao, Chin-Fu
• Granted Patent: US 10,784,222 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/304 Mechanical treatment, e.g. grinding, polishing, cutting H01L21/30625 takes precedence
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 2224/02311 Additive methods
• CPC Class Codes: H01L 2224/02313 Subtractive methods
• CPC Class Codes: H01L 2224/0239 Material of the redistribution layers
• CPC Class Codes: H01L 2224/03 Manufacturing methods
• CPC Class Codes: H01L 2224/0345 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/0361 Physical or chemical etching
• CPC Class Codes: H01L 2224/03901 with repetition of the same manufacturing step
• CPC Class Codes: H01L 2224/03912 the bump being used as a mask for patterning the bonding area
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05186 with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/10145 Flow barriers
• CPC Class Codes: H01L 2224/10175 : Flow barriers
• CPC Class Codes: H01L 2224/11 : Manufacturing methods
• CPC Class Codes: H01L 2224/11013 : for holding or confining the bump connector, e.g. solder flow barrier
• CPC Class Codes: H01L 2224/1146 : Plating
• CPC Class Codes: H01L 2224/1147 : using a lift-off mask
• CPC Class Codes: H01L 2224/11849 : Reflowing
• CPC Class Codes: H01L 2224/119 : Methods of manufacturing bump connectors involving a specific sequence of method steps
• CPC Class Codes: H01L 2224/11901 : with repetition of the same manufacturing step
• CPC Class Codes: H01L 2224/1191 : Forming a passivation layer after forming the bump connector
• CPC Class Codes: H01L 2224/13083 : Three-layer arrangements
• CPC Class Codes: H01L 2224/131 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13116 : Lead [Pb] as principal constituent
• CPC Class Codes: H01L 2224/13139 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13164 : Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/14051 : Bump connectors having different shapes
• CPC Class Codes: H01L 2224/14181 : On opposite sides of the body
• CPC Class Codes: H01L 2224/16145 : the bodies being stacked
• CPC Class Codes: H01L 2224/16225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 : the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/2929 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29386 : with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/32145 : the bodies being stacked
• CPC Class Codes: H01L 2224/32225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73204 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/81 : using a bump connector
• CPC Class Codes: H01L 2224/81007 : involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the bump connector during or after the bonding process
• CPC Class Codes: H01L 2224/81193 : wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81815 : Reflow soldering
• CPC Class Codes: H01L 2224/83104 : by applying pressure, e.g. by injection
• CPC Class Codes: H01L 2224/92 : Specific sequence of method steps
• CPC Class Codes: H01L 2224/92125 : the second connecting process involving a layer connector
• CPC Class Codes: H01L 2224/9222 : Sequential connecting processes
• CPC Class Codes: H01L 2224/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06517 : Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06541 : Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 2225/06568 : the devices decreasing in size, e.g. pyramidical stack
• CPC Class Codes: H01L 23/147 : Semiconductor insulating substrates semiconductor conductive substrates H01L23/4926
• CPC Class Codes: H01L 23/293 : Organic, e.g. plastic
• CPC Class Codes: H01L 23/3157 : Partial encapsulation or coating mask layer used as insulation layer H01L21/31
• CPC Class Codes: H01L 23/3171 : the coating being directly applied to the semiconductor body, e.g. passivation layer H01L23/3178 takes precedence
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/49816 : Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 23/49827 : Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/49894 : Materials of the insulating layers or coatings
• CPC Class Codes: H01L 24/02 : Bonding areas on insulating substrates, e.g. chip carriers, H01L23/49816, H01L23/49838, H01L23/5389; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/10 : Bump connectors bumps on insulating substrates, e.g. chip carriers, H01L23/49816; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/14 : of a plurality of bump connectors
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/92 : Specific sequence of method steps
• CPC Class Codes: H01L 24/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/05432 : Al2O3
• CPC Class Codes: H01L 2924/05442 : SiO2
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/3841 : Solder bridging

Abstract

A method includes forming a metal bump on a top surface of a first package component, forming a solder region on a top surface of the metal bump, forming a protection layer extending on a sidewall of the metal bump, reflowing the solder region to bond the first package component to a second package component, and dispensing an underfill between the first package component and the second package component. The underfill is in contact with the protection layer.

Claims

1. A method of forming a package, the method comprising:

forming a metal bump on a top surface of a first package component;

forming a solder region on a top surface of the metal bump;

forming a protection layer extending on a sidewall of the metal bump;

reflowing the solder region to bond the first package component to a second package component; and

dispensing an underfill between the first package component and the second package component, wherein the underfill is in contact with the protection layer.

2. The method of claim 1, wherein the protection layer is formed through inkjet printing.

3. The method of claim 2, wherein in the inkjet printing, the protection layer is printed to a location spaced apart from the metal bump, and the protection layer extends to the sidewall of the metal bump through capillary action.

4. The method of claim 1, wherein the forming the protection layer comprises:

spin coating the protection layer on the first package component, wherein the protection layer comprises a portion on a top surface of the solder region; and

performing a lithography process to remove the portion of the protection layer on the top surface of the solder region.

5. The method of claim 1, wherein the forming the protection layer comprises dispensing a light-sensitive polymer, and the protection layer is free from filler particles therein.

6. The method of claim 1, wherein the protection layer is spaced apart from the solder region.

7. The method of claim 1 further comprising, after the protection layer is formed, sawing the first package component from a respective wafer, wherein the sawing is performed after the underfill is dispensed.

8. The method of claim 1 further comprising removing a portion of the protection layer from a scribe line between the first package component and an additional component, wherein the first package component and the additional component are portions of an unsawed wafer.

9. The method of claim 1, wherein the forming the metal bump and the forming the solder region comprise:

forming a patterned plating mask having an opening therein; and

plating the metal bump and the solder region in the opening.

10. A method of forming a package, the method comprising:

forming a plating mask at a top surface of a first package component;

plating a first metal bump in an opening of the plating mask;

plating a first solder region in the opening and over the first metal bump;

removing the plating mask, wherein the first metal bump protrudes higher than a top dielectric layer of the first package component;

reflowing the first solder region; and

forming a first dielectric protection layer on the first package component, wherein the first dielectric protection layer contacts a vertical sidewall of the first metal bump.

11. The method of claim 10, wherein the forming the first dielectric protection layer comprises coating a light-sensitive polymer.

12. The method of claim 10, wherein the first dielectric protection layer is formed as being separated from the first solder region.

13. The method of claim 10, wherein the forming the first dielectric protection layer comprises an inkjet printing process, and the first dielectric protection layer flows to cover substantially an entirety of the vertical sidewall of the first metal bump.

14. The method of claim 10, wherein the first dielectric protection layer contacts the top dielectric layer, and the first dielectric protection layer and the top dielectric layer are formed of a same dielectric material, and are formed in separate process steps.

15-20. -20. (canceled)

21. A method of forming a package, the method comprising:

forming a package component comprising a surface dielectric layer;

forming a first electrical connector comprising;

a first non-solder region; and

a first solder region on a first top surface of the first non-solder region;

forming a second electrical connector comprising;

a second non-solder region; and

a second solder region on a second top surface of the second non-solder region;

dispensing a dielectric material between the first electrical connector and the second electrical connector; and

curing the dielectric material, wherein at a time the dielectric material is cured, a surface of the dielectric material is a free surface.

22. The method of claim 21, wherein the dielectric material is free from filler particles therein.

23. The method of claim 21, wherein the dispensing the dielectric material comprises dispensing polyimide, polybenzoxazole (PBO), or benzocyclobutene (BCB).

24. The method of claim 21, wherein after the dispensing the dielectric material, a top surface of the dielectric material in middle of the first electrical connector and the second electrical connector is lower than the first top surface of the first non-solder region, and the dielectric material climbs to the first top surface.

25. The method of claim 21, wherein the dispensing the dielectric material comprises an inkjet printing process.

26. The method of claim 21, wherein the package component comprises a scribe line, and at the time, a portion of the surface dielectric layer in the scribe line is exposed, and the method further comprising sawing through the scribe line.