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TRENCH TRANSISTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

  • US 20200135713A1
  • Filed: 10/24/2018
  • Published: 04/30/2020
  • Est. Priority Date: 10/24/2018
  • Status: Active Grant
First Claim
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1. A trench transistor structure, comprising:

  • a substrate structure, wherein a first region and a second region are defined in the substrate structure, and the substrate structure has a first trench located in the first region and a second trench located in the second region;

    a transistor device located in the first region and comprising an electrode located in the first trench, wherein the electrode and the substrate structure are isolated from each other; and

    an electrostatic discharge (ESD) protection device located in the second region and comprising a main body layer located in the second trench, whereinthe main body layer has a planarized top surface,PN junctions are located in the main body layer, andthe main body layer and the substrate structure are isolated from each other.

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