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SILICON-CONTROLLED RECTIFIERS WITH WELLS LATERALLY ISOLATED BY TRENCH ISOLATION REGIONS

  • US 20200135715A1
  • Filed: 10/26/2018
  • Published: 04/30/2020
  • Est. Priority Date: 10/26/2018
  • Status: Active Grant
First Claim
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1. A device structure for a silicon-controlled rectifier, the device structure comprising:

  • a substrate having a top surface;

    a first well of a first conductivity type arranged in the substrate;

    a second well of a second conductivity type arranged in the substrate between the first well and the top surface of the substrate, the second well adjoined with the first well along a first interface;

    a third well of the second conductivity type arranged in the substrate between the first well and the top surface of the substrate, the third well adjoined with the first well along a second interface;

    a first deep trench isolation region laterally arranged in the substrate between the third well of the second conductivity type and the second well of the second conductivity type, the first deep trench isolation region extending from the top surface of the substrate past the first interface and the second interface and into the first well; and

    a first doped region of the first conductivity type arranged in the substrate between the second well and the top surface of the substrate,wherein the first well extends continuously beneath the first deep trench isolation region.

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