×

SEMICONDUCTOR DEVICE

  • US 20200135716A1
  • Filed: 04/26/2019
  • Published: 04/30/2020
  • Est. Priority Date: 10/30/2018
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • a guard active area formed in a substrate;

    a plurality of transistors disposed in an element area adjacent to the guard active area, each of the transistors comprising an active area and a gate structure; and

    a diode transistor disposed between a first transistor and a second transistor among the transistors, and comprising;

    a diode gate structure connected to the guard active area;

    a first active area connected to a gate structure of the first transistor; and

    a second active area connected to a gate structure of the second transistor.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×