SEMICONDUCTOR DEVICE
First Claim
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1. A semiconductor device comprising:
- a guard active area formed in a substrate;
a plurality of transistors disposed in an element area adjacent to the guard active area, each of the transistors comprising an active area and a gate structure; and
a diode transistor disposed between a first transistor and a second transistor among the transistors, and comprising;
a diode gate structure connected to the guard active area;
a first active area connected to a gate structure of the first transistor; and
a second active area connected to a gate structure of the second transistor.
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Abstract
A semiconductor device includes a guard active area formed in a substrate, a plurality of transistors disposed in an element area adjacent to the guard active area, each of the transistors including an active area and a gate structure crossing the active area, and a diode transistor disposed between a first transistor and a second transistor among the transistors, and having a diode gate structure connected to the guard active area, a first active area connected to a gate structure of the first transistor, and a second active area connected to a gate structure of the second transistor.
6 Citations
20 Claims
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1. A semiconductor device comprising:
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a guard active area formed in a substrate; a plurality of transistors disposed in an element area adjacent to the guard active area, each of the transistors comprising an active area and a gate structure; and a diode transistor disposed between a first transistor and a second transistor among the transistors, and comprising; a diode gate structure connected to the guard active area; a first active area connected to a gate structure of the first transistor; and a second active area connected to a gate structure of the second transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a guard active area formed in a substrate; a first transistor adjacent to the guard active area, and comprising an active area and a gate structure; and a diode transistor adjacent to the guard active area and the first transistor, and comprising; a diode gate structure extending in a first direction and connected to the guard active area; and a first active area disposed between the diode gate structure and the first transistor, and connected to the gate structure of the first transistor. - View Dependent Claims (15, 16, 17, 18)
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19. A semiconductor device comprising;
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a substrate; a plurality of transistors formed in the substrate, and comprising an active area doped with a first conductivity type impurity and a gate structure crossing the active area; a guard active area formed in the substrate, to be adjacent to the transistors, and doped with the first conductivity type impurity; and a diode transistor comprising; a diode gate structure connected to the guard active area; and a first active area and a second active area disposed opposite sides of the diode gate structure, and configured to pass a current generated in a process of manufacturing the semiconductor device using plasma to the substrate. - View Dependent Claims (20)
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Specification