ANTI-FUSE CELL AND CHIP HAVING ANTI-FUSE CELLS
First Claim
1. A chip, comprising a plurality of anti-fuse cells, each of the anti-fuse cells being coupled to a world line, a bit line and a program line, each of the anti-fuse cells comprising:
- a control device, comprising a source node, a drain node and a gate node, wherein the gate node is electrically coupled to the word line and the drain node is electrically coupled to the bit line; and
an anti-fuse element, comprising a first conductive layer, a second conductive layer and a dielectric layer, wherein the dielectric layer is disposed between the first conductive layer and the second conductive layer, the first conductive layer is coupled to the program line, and the second conductive layer is electrically coupled to the source node of the control device,wherein the bit line is located at a first level conductive layer of the chip, the anti-fuse element is located at a second level conductive layer of the chip, and the second level conductive layer is higher than the first level conductive layer.
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Accused Products
Abstract
An anti-fuse cell includes a control device and an anti-fuse element is introduced. The control device includes a source node, a drain node and a gate node, wherein the gate node is electrically coupled to a word line and the drain node is electrically coupled to a bit line. The anti-fuse element includes a first conductive layer, a second conductive layer and a dielectric layer, wherein the dielectric layer is disposed between the first conductive layer and the second conductive layer. The second conductive layer of the anti-fuse element is physically stacked upon a conductive layer and electrically connected to the source node of the control device, and first conductive layer is electrically coupled to a program line through a via. An anti-fuse cell having multiple anti-fuse elements and a chip having a plurality of anti-fuse cells are also introduced.
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Citations
20 Claims
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1. A chip, comprising a plurality of anti-fuse cells, each of the anti-fuse cells being coupled to a world line, a bit line and a program line, each of the anti-fuse cells comprising:
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a control device, comprising a source node, a drain node and a gate node, wherein the gate node is electrically coupled to the word line and the drain node is electrically coupled to the bit line; and an anti-fuse element, comprising a first conductive layer, a second conductive layer and a dielectric layer, wherein the dielectric layer is disposed between the first conductive layer and the second conductive layer, the first conductive layer is coupled to the program line, and the second conductive layer is electrically coupled to the source node of the control device, wherein the bit line is located at a first level conductive layer of the chip, the anti-fuse element is located at a second level conductive layer of the chip, and the second level conductive layer is higher than the first level conductive layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. An anti-fuse cell, being coupled to a world line, a bit line and a program line, the anti-fuse cell comprising:
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a control device, comprising a source node, a drain node and a gate node, wherein the gate node is electrically coupled to the word line and the drain node is electrically coupled to the bit line; and an anti-fuse element, comprising a first conductive layer, a second conductive layer and a dielectric layer, wherein the dielectric layer is disposed between the first conductive layer and the second conductive layer, wherein the second conductive layer of the anti-fuse element is physically stacked upon a conductive layer and electrically connected to the source node of the control device, and first conductive layer is electrically coupled to the program line through a via, wherein the bit line is located at a first level conductive layer, the anti-fuse element is located at a second level conductive layer, and the second level conductive layer is higher than the first level conductive layer. - View Dependent Claims (14, 15, 16)
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17. An anti-fuse cell, being coupled to a world line, a bit line and a program line, the anti-fuse cell comprising:
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a control device, comprising a source node, a drain node and a gate node, wherein the gate node is electrically coupled to the word line and the drain node is electrically coupled to the bit line; a first anti-fuse element, comprising a first conductive layer, a second conductive layer and a first dielectric layer, wherein the first dielectric layer is disposed between the first conductive layer and the second conductive layer; and a second anti-fuse element, comprising a third conductive layer, a fourth conductive layer and a second dielectric layer, wherein the second dielectric layer is disposed between the third conductive layer and the fourth conductive layer, wherein the first conductive layer and the third conductive layer are electrically coupled to the program line, and the second conductive layer and the fourth conductive layer are electrically coupled to the source node of the control device. - View Dependent Claims (18, 19, 20)
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Specification