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MEMORY CELL PILLAR INCLUDING SOURCE JUNCTION PLUG

  • US 20200135748A1
  • Filed: 12/23/2019
  • Published: 04/30/2020
  • Est. Priority Date: 11/07/2014
  • Status: Active Grant
First Claim
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1. An apparatus comprising:

  • a source material;

    a dielectric material over the source material, the dielectric material including an opening;

    a select gate material over the dielectric material;

    a memory cell stack over the select gate material;

    a conductive plug located in the opening of the dielectric material and contacting a portion of the source material; and

    a channel material extending through the memory cell stack and the select gate material and contacting the conductive plug.

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