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THREE-DIMENSIONAL SEMICONDUCTOR DEVICE

  • US 20200135749A1
  • Filed: 08/17/2019
  • Published: 04/30/2020
  • Est. Priority Date: 10/25/2018
  • Status: Active Grant
First Claim
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1. A three-dimensional semiconductor device comprising:

  • a lower structure;

    a stacked structure disposed in a first region and a second region on the lower structure, the stacked structure including gate patterns stacked in a vertical direction, perpendicular to an upper surface of the lower structure, the gate patterns including pad regions disposed in a stepped structure in the second region; and

    vertical channel structures disposed on the lower structure and having a side surface facing the gate patterns, wherein;

    the stacked structure includes a first stacked region, a second stacked region and a third stacked region that are sequentially arranged in the second region in a first direction,the first stacked region includes a first stepped region, having a stepped structure changing in a unit of a first height,the second stacked region includes a second stepped region, having a stepped structure, lowered in a unit of a second height, greater than the first height in the first direction,the third stacked region includes an upwardly stepped region and a downwardly stepped region,the upwardly stepped region of the third stacked region has a stepped structure raising in a unit of the second height in the first direction, andthe downwardly stepped region of the third stacked region has a stepped structure lowered in a unit of the second height in the first direction.

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