SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION SYSTEM
First Claim
1. A semiconductor device comprising:
- an insulating film having a rectangular or stripe pattern depression portion and projection portion; and
a thin film transistor having a channel formation region that is placed between center and edge of the depression portion of the insulating film,wherein the channel formation region extends along a longitudinal direction of the rectangular or stripe pattern depression portion and projection portion.
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Accused Products
Abstract
A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
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1 Claim
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1. A semiconductor device comprising:
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an insulating film having a rectangular or stripe pattern depression portion and projection portion; and a thin film transistor having a channel formation region that is placed between center and edge of the depression portion of the insulating film, wherein the channel formation region extends along a longitudinal direction of the rectangular or stripe pattern depression portion and projection portion.
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Specification