SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

• US 20200135784A1
• Filed: 12/24/2019
• Published: 04/30/2020
• Est. Priority Date: 04/17/2015
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: HUANG, ZEN-FONG, CHIEN, VOLUME, CHANG, SU-HUA
• Granted Patent: US 11,063,077 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14625 Optical elements or arrangements associated with the device
• CPC Class Codes: H01L 27/14629 Reflectors
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14645 Colour imagers
• CPC Class Codes: H01L 27/14649 Infrared imagers
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements

Abstract

A semiconductor structure includes a substrate, a barrier layer disposed over the substrate, a grid disposed over the barrier layer, and a first color filter disposed over the barrier layer. The semiconductor structure also includes a second color filter disposed over the substrate and laterally surrounded by and contacting the grid. The semiconductor structure further includes a dielectric layer disposed between the barrier layer and the substrate. The barrier layer includes an upper surface overlapping the grid and the first color filter and a bottom surface substantially level with a bottom surface of the second color filter. The dielectric layer includes a first portion overlapping a bottom surface of the first color filter and a second portion overlapping a bottom surface of the second color filter, wherein non-visible light is allowed to pass from the second color filter to the substrate through the second portion of the dielectric layer.

Claims

1. A semiconductor structure, comprising:

a substrate configured to receive an electromagnetic radiation;

a barrier layer disposed over the substrate;

a grid disposed over the barrier layer;

a first color filter disposed over the barrier layer and configured to allow visible light in the electromagnetic radiation to pass through, the first color filter laterally surrounded by and contacting the grid;

a second color filter disposed over the substrate and laterally surrounded by and contacting the grid, the second color filter also partially surrounded by the barrier layer; and

a dielectric layer disposed between the barrier layer and the substrate,

wherein the barrier layer comprises an upper surface overlapping the grid and an entirety of the first color filter and a bottom surface substantially level with a bottom surface of the second color filter, and

wherein the dielectric layer comprises a first portion overlapping an entirety of a bottom surface of the first color filter and a second portion overlapping an entirety of a bottom surface of the second color filter, wherein non-visible light is allowed to pass from the second color filter to the substrate through the second portion of the dielectric layer.

2. The semiconductor structure of claim 1, wherein the barrier layer is configured to absorb or reflect infra-red radiation (IR) in the electromagnetic radiation passing through the first color filter.

3. The semiconductor structure of claim 1, wherein the first color filter is configured to allow the visible light in the electromagnetic radiation to pass through and impinges on the substrate.

4. The semiconductor structure of claim 1, wherein the first color filter contacts the barrier layer.

5. The semiconductor structure of claim 1, wherein a thickness of the barrier layer is substantially greater than about 0.1 μ

m.

6. The semiconductor structure of claim 1, wherein a thickness of the substrate is substantially greater than 1 μ

m.

7. The semiconductor structure of claim 1, wherein the substrate comprises a first side and a second side disposed opposite to the first side, wherein the dielectric layer is disposed on the second side of the substrate.

8. The semiconductor structure of claim 1, wherein the barrier layer includes nitride, silicon oxide or silicon carbide.

9. The semiconductor structure of claim 1, wherein the barrier layer defines a boundary of the second color filter.

10. The semiconductor structure of claim 1, wherein the dielectric layer is formed of a high-k dielectric material.

11. The semiconductor structure of claim 1, wherein the grid comprises an upper surface level with a top surface of the first color filter and a bottom surface facing the barrier layer, and the grid is formed of a same material from the upper surface to the bottom surface of the grid.

12. The semiconductor structure of claim 11, wherein the material of the grid is a metallic material.

13. A semiconductor structure, comprising:

a substrate including a first side and a second side disposed opposite to the first side and configured to receive an electromagnetic radiation;

a barrier layer disposed over the second side of the substrate;

a grid disposed over the barrier layer;

a plurality of first color filters disposed over the barrier layer and laterally surrounded by and contacting the grid;

a plurality of second color filters disposed over the substrate and laterally surrounded by and contacting the grid, the plurality of second color filters also laterally surrounded by the barrier layer; and

a dielectric layer disposed between the barrier layer and the substrate,

wherein the barrier layer comprises an upper surface overlapping the grid and an entirety of each of the plurality of first color filters and comprises a bottom surface substantially level with a bottom surface of each of the plurality of second color filters, and

wherein the dielectric layer comprises a first portion overlapping an entirety of a bottom surface of each of the first color filters and a second portion overlapping an entirety of a bottom surface of each of the second color filters, wherein non-visible light is allowed to pass from the plurality of second color filters to the substrate through the second portion of the dielectric layer.

14. The semiconductor structure of claim 13, wherein some of the plurality of first color filters are configured to allow one of primary colors of visible light in the electromagnetic radiation to pass through.

15. The semiconductor structure of claim 13, wherein the barrier layer includes nitride and oxide.

16. The semiconductor structure of claim 13, wherein the substrate includes a photosensitive diode configured to generate a signal in accordance with an intensity or brightness of the electromagnetic radiation that impinges on the photosensitive diode.

17. The semiconductor structure of claim 13, wherein the dielectric layer is in contact with the substrate and the barrier layer.

18. A semiconductor structure, comprising:

a substrate;

a dielectric layer disposed over the substrate;

a barrier layer disposed over the dielectric layer;

a first color filter disposed over the barrier layer;

a second color filter disposed over the substrate and adjacent from the barrier layer; and

a grid over the barrier layer and separating the first color filter from the second color filter, wherein the grid comprises an upper surface level with a top surface of the first color filter and a bottom surface facing the barrier layer, and the grid is formed of a same material from the upper surface to the bottom surface of the grid.

19. The semiconductor structure of claim 18, wherein the barrier layer comprises a stack of a first dielectric layer and a second dielectric layer different from the first dielectric layer.

20. The semiconductor structure of claim 19, wherein the first dielectric layer overlaps the second color filter.