SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
First Claim
1. A semiconductor structure, comprising:
- a substrate configured to receive an electromagnetic radiation;
a barrier layer disposed over the substrate;
a grid disposed over the barrier layer;
a first color filter disposed over the barrier layer and configured to allow visible light in the electromagnetic radiation to pass through, the first color filter laterally surrounded by and contacting the grid;
a second color filter disposed over the substrate and laterally surrounded by and contacting the grid, the second color filter also partially surrounded by the barrier layer; and
a dielectric layer disposed between the barrier layer and the substrate,wherein the barrier layer comprises an upper surface overlapping the grid and an entirety of the first color filter and a bottom surface substantially level with a bottom surface of the second color filter, andwherein the dielectric layer comprises a first portion overlapping an entirety of a bottom surface of the first color filter and a second portion overlapping an entirety of a bottom surface of the second color filter, wherein non-visible light is allowed to pass from the second color filter to the substrate through the second portion of the dielectric layer.
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Abstract
A semiconductor structure includes a substrate, a barrier layer disposed over the substrate, a grid disposed over the barrier layer, and a first color filter disposed over the barrier layer. The semiconductor structure also includes a second color filter disposed over the substrate and laterally surrounded by and contacting the grid. The semiconductor structure further includes a dielectric layer disposed between the barrier layer and the substrate. The barrier layer includes an upper surface overlapping the grid and the first color filter and a bottom surface substantially level with a bottom surface of the second color filter. The dielectric layer includes a first portion overlapping a bottom surface of the first color filter and a second portion overlapping a bottom surface of the second color filter, wherein non-visible light is allowed to pass from the second color filter to the substrate through the second portion of the dielectric layer.
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Citations
20 Claims
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1. A semiconductor structure, comprising:
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a substrate configured to receive an electromagnetic radiation; a barrier layer disposed over the substrate; a grid disposed over the barrier layer; a first color filter disposed over the barrier layer and configured to allow visible light in the electromagnetic radiation to pass through, the first color filter laterally surrounded by and contacting the grid; a second color filter disposed over the substrate and laterally surrounded by and contacting the grid, the second color filter also partially surrounded by the barrier layer; and a dielectric layer disposed between the barrier layer and the substrate, wherein the barrier layer comprises an upper surface overlapping the grid and an entirety of the first color filter and a bottom surface substantially level with a bottom surface of the second color filter, and wherein the dielectric layer comprises a first portion overlapping an entirety of a bottom surface of the first color filter and a second portion overlapping an entirety of a bottom surface of the second color filter, wherein non-visible light is allowed to pass from the second color filter to the substrate through the second portion of the dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor structure, comprising:
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a substrate including a first side and a second side disposed opposite to the first side and configured to receive an electromagnetic radiation; a barrier layer disposed over the second side of the substrate; a grid disposed over the barrier layer; a plurality of first color filters disposed over the barrier layer and laterally surrounded by and contacting the grid; a plurality of second color filters disposed over the substrate and laterally surrounded by and contacting the grid, the plurality of second color filters also laterally surrounded by the barrier layer; and a dielectric layer disposed between the barrier layer and the substrate, wherein the barrier layer comprises an upper surface overlapping the grid and an entirety of each of the plurality of first color filters and comprises a bottom surface substantially level with a bottom surface of each of the plurality of second color filters, and wherein the dielectric layer comprises a first portion overlapping an entirety of a bottom surface of each of the first color filters and a second portion overlapping an entirety of a bottom surface of each of the second color filters, wherein non-visible light is allowed to pass from the plurality of second color filters to the substrate through the second portion of the dielectric layer. - View Dependent Claims (14, 15, 16, 17)
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18. A semiconductor structure, comprising:
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a substrate; a dielectric layer disposed over the substrate; a barrier layer disposed over the dielectric layer; a first color filter disposed over the barrier layer; a second color filter disposed over the substrate and adjacent from the barrier layer; and a grid over the barrier layer and separating the first color filter from the second color filter, wherein the grid comprises an upper surface level with a top surface of the first color filter and a bottom surface facing the barrier layer, and the grid is formed of a same material from the upper surface to the bottom surface of the grid. - View Dependent Claims (19, 20)
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Specification