Semiconductor Device With Magnetic Tunnel Junctions

• US 20200135806A1
• Filed: 09/04/2019
• Published: 04/30/2020
• Est. Priority Date: 10/31/2018
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Peng, Tai-Yen, Chang, Tsung-Hsien, Chen, Yu-Shu, Ting, Chih-Yuan, Shieh, Jyu-Horng, Lin, Chung-Te
• Granted Patent: US 11,037,981 B2
• Time in Patent Office: Days
• CPC Class Codes: G11C 11/005 comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1659 Cell access
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A semiconductor device includes a substrate; a memory array over the substrate, the memory array including first magnetic tunnel junctions (MTJs), where the first MTJs are in a first dielectric layer over the substrate; and a resistor circuit over the substrate, the resistor circuit including second MTJs, where the second MTJs are in the first dielectric layer.

Claims

1. A semiconductor device comprising:

a substrate;

a memory array over the substrate, the memory array comprising first magnetic tunnel junctions (MTJs), wherein the first MTJs are in a first dielectric layer over the substrate; and

a resistor circuit over the substrate, the resistor circuit comprising second MTJs, wherein the second MTJs are in the first dielectric layer.

2. The semiconductor device of claim 1, wherein the first MTJs and the second MTJs have a same structure.

3. The semiconductor device of claim 1, wherein each of the first MTJs is configured to store a data bit, and each of the second MTJs is configured to function as a resistor.

4. The semiconductor device of claim 3, wherein the first MTJs are configured to store data bits independent of each other, and the second MTJs are electrically coupled together to provide an equivalent resistance for the resistor circuit.

5. The semiconductor device of claim 4, wherein the equivalent resistance is programmable and has a plurality of values.

6. The semiconductor device of claim 1, wherein each of the first MTJs is coupled between a bit line (BL) of the memory array and a drain of a respective transistor of the memory array, wherein a gate of the respective transistor is coupled to a word line (WL) of the memory array, and a source of the respective transistor is coupled to a common sensing line (CSL) of the memory array.

7. The semiconductor device of claim 6, wherein the second MTJs are electrically coupled in series or in parallel.

8. The semiconductor device of claim 6, wherein the gate of the respective transistor is in an interlayer dielectric (ILD) layer over the substrate, the common sensing line is in a first inter-metal dielectric (IMD) layer over and contacting the ILD layer, and the word line is in a second IMD layer over and contacting the first IMD layer.

9. The semiconductor device of claim 8, wherein the second MTJs are in a third IMD layer over the second IMD layer, and the bit line is in a fourth IMD layer over the third IMD layer.

10. The semiconductor device of claim 1, wherein the second MTJs are electrically coupled in series.

11. The semiconductor device of claim 10, wherein the second MTJs are electrically coupled in a head-to-tail configuration such that internal current flow directions of the second MTJs are the same.

12. The semiconductor device of claim 10, wherein the second MTJs are electrically coupled in a head-to-head configuration such that a first internal current flow direction of a first one of the second MTJs is opposite to a second internal current flow direction of a second one of the second MTJs, the second one being adjacent to the first one.

13. A semiconductor device comprising:

a memory array in a memory region of the semiconductor device and comprising first magnetic tunnel junctions (MTJs), wherein the first MTJs are configured to store data bits; and

a resistor circuit in a logic region of the semiconductor device and comprising second MTJs that are electrically coupled together to provide an equivalent electrical resistance, wherein the first MTJs and the second MTJs are disposed in a same dielectric layer over a substrate of the semiconductor device.

14. The semiconductor device of claim 13, wherein the first MTJs and the second MTJs have a same structure.

15. The semiconductor device of claim 13, wherein the second MTJs are electrically coupled in series or in parallel.

16. The semiconductor device of claim 15, wherein the second MTJs are electrically coupled in series, wherein internal current flow directions of two adjacent MTJs are opposite to each other.

17. The semiconductor device of claim 13, wherein the equivalent electrical resistance is programmable by supplying a pre-determined sequence of electrical currents through the second MTJs.

18. A method of forming a semiconductor device, the method comprising:

forming a memory array over a substrate, wherein forming the memory array comprises forming first magnetic tunnel junctions (MTJs) in a first dielectric layer over the substrate; and

forming a resistor circuit over the substrate, wherein forming the resistor circuit comprises forming second MTJs in the first dielectric layer and electrically coupling the second MTJs to provide an electrical resistance.

19. The method of claim 18, wherein the first MTJs and the second MTJs are formed in a same processing step using same materials.

20. The method of claim 18, further comprising setting a value of the electrical resistance by supplying a pre-determined sequence of electrical currents through the second MTJs.