THREE-DIMENSIONAL (3D) METAL-INSULATOR-METAL CAPACITOR (MIMCAP) AND METHOD
First Claim
1. An integrated circuit structure comprising:
- a substrate; and
a metal level above the substrate and comprising;
a first dielectric layer;
a second dielectric layer on the first dielectric layer;
a metal-insulator-metal capacitor comprising;
trenches extending through the second dielectric layer and the first dielectric layer; and
a metal-insulator-metal stack comprising;
a first conformal metal layer on the second dielectric layer and lining the trenches;
a conformal insulator layer on the first conformal metal layer; and
a second conformal metal layer on the conformal insulator layer;
a third dielectric layer on the second conformal metal layer and filling the trenches;
a fourth dielectric layer comprising a conformal dielectric layer above and immediately adjacent to a top surface of the third dielectric layer and further extending laterally beyond the third dielectric layer and the metal-insulator-metal capacitor so as to be above and immediately adjacent to a top surface of the second dielectric layer;
a fifth dielectric layer on the fourth dielectric layer, wherein the fifth dielectric layer has a planar top surface, wherein a first portion of the fifth dielectric layer on the fourth dielectric layer opposite the third dielectric layer has a first thickness and wherein a second portion of the fifth dielectric layer on the fourth dielectric layer opposite the second dielectric layer has a second thickness that is greater than the first thickness; and
a top electrode contact that extends through the first portion of the fifth dielectric layer, the fourth dielectric layer and the third dielectric layer to a top surface of the second conformal metal layer.
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Accused Products
Abstract
Disclosed are integrated circuit (IC) structure embodiments with a three-dimensional (3D) metal-insulator-metal capacitor (MIMCAP) in back-end-of-the-line (BEOL) metal levels. The MIMCAP includes a plurality of high aspect ratio trenches that extend through at least one relatively thick dielectric layer within the metal levels. Conformal layers of a metal, an insulator and another metal line the trenches and cover the top of the dielectric layer in the area of the MIMCAP. Different configurations for the bottom and top electrode contacts can be used including, for example, one configuration where the top electrode contact is a dual-damascene structure within an ultra-thick metal (UTM) level above the MIMCAP and another configuration where both the top and bottom electrode contacts are such dual-damascene structures. Also disclosed are method embodiments for forming IC structures with such a MIMCAP and these method embodiments can be readily integrated into current BEOL processing, including UTM-level dual-damascene processing.
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Citations
33 Claims
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1. An integrated circuit structure comprising:
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a substrate; and a metal level above the substrate and comprising; a first dielectric layer; a second dielectric layer on the first dielectric layer; a metal-insulator-metal capacitor comprising; trenches extending through the second dielectric layer and the first dielectric layer; and a metal-insulator-metal stack comprising;
a first conformal metal layer on the second dielectric layer and lining the trenches;
a conformal insulator layer on the first conformal metal layer; and
a second conformal metal layer on the conformal insulator layer;a third dielectric layer on the second conformal metal layer and filling the trenches; a fourth dielectric layer comprising a conformal dielectric layer above and immediately adjacent to a top surface of the third dielectric layer and further extending laterally beyond the third dielectric layer and the metal-insulator-metal capacitor so as to be above and immediately adjacent to a top surface of the second dielectric layer; a fifth dielectric layer on the fourth dielectric layer, wherein the fifth dielectric layer has a planar top surface, wherein a first portion of the fifth dielectric layer on the fourth dielectric layer opposite the third dielectric layer has a first thickness and wherein a second portion of the fifth dielectric layer on the fourth dielectric layer opposite the second dielectric layer has a second thickness that is greater than the first thickness; and a top electrode contact that extends through the first portion of the fifth dielectric layer, the fourth dielectric layer and the third dielectric layer to a top surface of the second conformal metal layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9-20. -20. (canceled)
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21. An integrated circuit structure comprising:
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a substrate; and a metal level above the substrate and comprising; a first dielectric layer; a second dielectric layer on the first dielectric layer; a metal-insulator-metal capacitor comprising; trenches extending through the second dielectric layer and the first dielectric layer; and a metal-insulator-metal stack comprising;
a first conformal metal layer on the second dielectric layer and lining the trenches;
a conformal insulator layer on the first conformal metal layer; and
a second conformal metal layer on the conformal insulator layer;a third dielectric layer on the second conformal metal layer and filling the trenches, wherein end walls of the conformal insulator layer, the second conformal metal layer and the third dielectric layer are vertically aligned and wherein an end portion of the first conformal metal layer extends laterally beyond the end walls; a fourth dielectric layer comprising a conformal dielectric layer above and immediately adjacent to a top surface of the third dielectric layer, positioned laterally immediately adjacent to the end walls, above and immediately adjacent to a top surface of the end portion of the first conformal metal layer and further extending laterally beyond the metal-insulator-metal capacitor and onto a top surface of the second dielectric layer; a fifth dielectric layer on the fourth dielectric layer, wherein the fifth dielectric layer has a planar top surface, wherein a first portion of the fifth dielectric layer on the fourth dielectric layer opposite the third dielectric layer has a first thickness, wherein a second portion of the fifth dielectric layer on the fourth dielectric layer opposite the second dielectric layer has a second thickness that is greater than the first thickness, and wherein a third portion of the fifth dielectric layer on the fourth dielectric layer opposite the end portion of the first conformal metal layer has a third thickness that is between the first thickness and the second thickness; a top electrode contact extending through the first portion of the fifth dielectric layer, the fourth dielectric layer, and third dielectric layer to a top surface of the second conformal metal layer; and a bottom electrode contact extending through the third portion of the fifth dielectric layer and the fourth dielectric layer to the top surface of the end portion of the first conformal metal layer, wherein top surfaces of the top electrode contact, the bottom electrode contact and the fifth dielectric layer are coplanar. - View Dependent Claims (22, 23, 24, 25, 26)
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27. An integrated circuit structure comprising:
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a substrate; and a metal level above the substrate and comprising; a first dielectric layer; a second dielectric layer on the first dielectric layer; a metal-insulator-metal capacitor comprising; trenches extending through the second dielectric layer and the first dielectric layer; and a metal-insulator-metal stack comprising;
a first conformal metal layer on the second dielectric layer and lining the trenches;
a conformal insulator layer on the first conformal metal layer; and
a second conformal metal layer on the conformal insulator layer;a third dielectric layer on the second conformal metal layer and filling the trenches, wherein end walls of the conformal insulator layer, the second conformal metal layer and the third dielectric layer are vertically aligned and wherein an end portion of the first conformal metal layer extends laterally beyond the end walls; a fourth dielectric layer comprising a conformal dielectric layer above and immediately adjacent to a top surface of the third dielectric layer, positioned laterally immediately adjacent to the end walls, above and immediately adjacent to a top surface of the end portion of the first conformal metal layer and further extending laterally beyond the metal-insulator-metal capacitor onto a top surface of the second dielectric layer; a fifth dielectric layer on the fourth dielectric layer, wherein the fifth dielectric layer has a planar top surface, wherein a first portion of the fifth dielectric layer on the fourth dielectric layer opposite the third dielectric layer has a first thickness, wherein a second portion of the fifth dielectric layer on the fourth dielectric layer opposite the second dielectric layer has a second thickness that is greater than the first thickness, and wherein a third portion of the fifth dielectric layer on the fourth dielectric layer opposite the end portion of the first conformal metal layer has a third thickness that is between the first thickness and the second thickness; a dual-damascene top electrode contact comprising;
a top electrode wire extending through the first portion of the fifth dielectric layer and into an upper portion of the fourth dielectric layer such that a bottom of the top electrode wire is above and physically separated from the top surface of the third dielectric layer; and
at least one top electrode via interconnect extending from the bottom of the top electrode wire through a lower portion of the fourth dielectric layer and further through the third dielectric layer to a top surface of the second conformal metal layer; anda dual-damascene bottom electrode contact comprising;
a bottom electrode wire extending through the third portion of the fifth dielectric layer such that a bottom of the bottom electrode wire is adjacent to a top surface of the fourth dielectric layer; and
at least one bottom electrode via interconnect extending from the bottom of the bottom electrode wire through the fourth dielectric layer to the top surface of the end portion of the first conformal metal layer, wherein top surfaces of the dual-damascene top electrode contact, the dual-damascene bottom electrode contact and the fifth dielectric layer are coplanar. - View Dependent Claims (28, 29, 30, 31, 32, 33)
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Specification