NANOSHEET FET BOTTOM ISOLATION
First Claim
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1. A method of forming a semiconductor device, the method comprising:
- forming a rare earth material on a substrate;
forming an isolation layer at an interface between the rare earth material and the substrate;
forming channel layers over the isolation layer; and
forming source or drain (S/D) regions on the isolation layer.
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Abstract
A technique relates to a semiconductor device. A rare earth material is formed on a substrate. An isolation layer is formed at an interface of the rare earth material and the substrate. Channel layers are formed over the isolation layer. Source or drain (S/D) regions are formed on the isolation layer.
9 Citations
20 Claims
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1. A method of forming a semiconductor device, the method comprising:
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forming a rare earth material on a substrate; forming an isolation layer at an interface between the rare earth material and the substrate; forming channel layers over the isolation layer; and forming source or drain (S/D) regions on the isolation layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a rare earth material formed on a substrate; an isolation layer formed at an interface of the rare earth material and the substrate; channel layers formed over the isolation layer; and source or drain (S/D) regions formed on the isolation layer. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A method of forming an isolation layer for a semiconductor device, the method comprising:
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forming a rare earth oxide material on a substrate; diffusing oxygen through the rare earth oxide material such that an oxide is grown at an interface between the rare earth oxide material and the substrate, the oxide being the isolation layer; forming channel layers over the isolation layer; and forming source or drain (S/D) regions on the isolation layer.
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Specification