Strained Nanowire CMOS Device and Method of Forming
First Claim
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1. A method of forming a semiconductor device, the method comprising:
- forming a first fin and a second fin, each of the first fin and the second fin comprising alternating first semiconductor material layers and second semiconductor material layers;
forming a dummy gate structure over the first fin and the second fin;
forming a first dielectric layer over the first fin and the second fin;
removing a first portion the dummy gate structure to form a first recess, the first recess exposing a first channel region of the first fin;
removing at least a portion of the second semiconductor material layers in the first channel region of the first fin;
forming a second dielectric layer over the first channel region of the first fin;
removing a second portion of the dummy gate structure to form a second recess, the second recess exposing a second channel region of the second fin;
removing at least a portion of the first semiconductor material layers in the second channel region of the second fin; and
forming a gate electrode over the first channel region and the second channel region.
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Abstract
Transistor structures and methods of forming transistor structures are provided. The transistor structures include alternating layers of a first epitaxial material and a second epitaxial material. In some embodiments, one of the first epitaxial material and the second epitaxial material may be removed for one of an n-type or p-type transistor. A bottommost layer of the first epitaxial material and the second epitaxial material maybe be removed, and sidewalls of one of the first epitaxial material and the second epitaxial material may be indented or recessed.
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Citations
20 Claims
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1. A method of forming a semiconductor device, the method comprising:
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forming a first fin and a second fin, each of the first fin and the second fin comprising alternating first semiconductor material layers and second semiconductor material layers; forming a dummy gate structure over the first fin and the second fin; forming a first dielectric layer over the first fin and the second fin; removing a first portion the dummy gate structure to form a first recess, the first recess exposing a first channel region of the first fin; removing at least a portion of the second semiconductor material layers in the first channel region of the first fin; forming a second dielectric layer over the first channel region of the first fin; removing a second portion of the dummy gate structure to form a second recess, the second recess exposing a second channel region of the second fin; removing at least a portion of the first semiconductor material layers in the second channel region of the second fin; and forming a gate electrode over the first channel region and the second channel region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of forming a semiconductor device, the method comprising:
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forming a first fin and a second fin, each of the first fin and the second fin comprising an alternating epitaxial structure, the alternating epitaxial structure comprising alternating first semiconductor material layers and second semiconductor material layers, the alternating epitaxial structure of each of the first fin and the second fin comprising a bottommost first semiconductor material layer on a substrate; forming a sacrificial gate structure over a first channel region of the first fin and a second channel region of the second fin; forming a dielectric layer over the first fin and the second fin adjacent the sacrificial gate structure; removing a first portion of the sacrificial gate structure to expose the first channel region; indenting sidewalls of the first semiconductor material layers from sidewalls of the second semiconductor material layers in the first channel region of the first fin; removing a second portion of the sacrificial gate structure to expose the second channel region; indenting sidewalls of the second semiconductor material layers from sidewalls of the first semiconductor material layers in the second channel region of the second fin; and forming a replacement gate over the first channel region and the second channel region. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A method of forming a semiconductor device, the method comprising:
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forming a first fin and a second fin, each of the first fin and the second fin comprising alternating first semiconductor material layers and second semiconductor material layers; forming a dummy gate structure over a first channel region of the first fin and a second channel region of the second fin; forming a dielectric layer over the first fin and the second fin adjacent the dummy gate structure; at least partially recessing the first semiconductor material layers in the first channel region; at least partially recessing the second semiconductor material layers in the second channel region; and forming a replacement gate structure over the first channel region and the second channel region. - View Dependent Claims (19, 20)
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Specification