PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIER REGIONS

• US 20200135866A1
• Filed: 05/29/2019
• Published: 04/30/2020
• Est. Priority Date: 09/08/2015
• Status: Active Grant

• Current Assignee: MACOM Technology Solutions Holdings, Inc.
• Original Assignee: MACOM Technology Solutions Holdings, Inc.
• Inventors: Linthicum, Kevin J.
• Granted Patent: US 11,264,465 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/02378 Silicon carbide
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02447 Silicon carbide
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 29/1029 of field-effect transistors
• CPC Class Codes: H01L 29/1075 of field-effect transistors
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/205 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/32 the imperfections being within the semiconductor body
• CPC Class Codes: H01L 29/41758 for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular H01L29/41733 - H01L29/4175 take precedence
• CPC Class Codes: H01L 29/778 with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface H01L29/803 takes precedence
• CPC Class Codes: H01L 29/7783 using III-V semiconductor material

Abstract

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.

Claims

1. A semiconductor structure, comprising:

a substrate comprising silicon and comprising at least a layer having a resistivity of greater than 10² Ohms-cm;

a diffusion barrier region comprising silicon carbide located over a surface of the substrate; and

a III-nitride material region located over the diffusion barrier region comprising silicon carbide.