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PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIER REGIONS

  • US 20200135866A1
  • Filed: 05/29/2019
  • Published: 04/30/2020
  • Est. Priority Date: 09/08/2015
  • Status: Active Grant
First Claim
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1. A semiconductor structure, comprising:

  • a substrate comprising silicon and comprising at least a layer having a resistivity of greater than 102 Ohms-cm;

    a diffusion barrier region comprising silicon carbide located over a surface of the substrate; and

    a III-nitride material region located over the diffusion barrier region comprising silicon carbide.

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