×

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20200135867A1
  • Filed: 01/02/2020
  • Published: 04/30/2020
  • Est. Priority Date: 07/01/2016
  • Status: Active Grant
First Claim
Patent Images

1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming a first conductor;

    forming a first insulator over the first conductor;

    performing first heat treatment after the first insulator is formed;

    forming a first oxide over the first insulator;

    forming a second oxide over the first oxide at a substrate temperature of higher than or equal to 100°

    C. and lower than 140°

    C. with a proportion of an oxygen gas of higher than or equal to 0% and lower than or equal to 30%;

    forming a second conductor and a third conductor over the second oxide so that the second conductor and the third conductor are separate from each other;

    forming a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor at a substrate temperature of higher than or equal to room temperature and lower than 200°

    C. with a proportion of an oxygen gas of higher than or equal to 70% to cover the first oxide and the second oxide;

    forming a second insulator over the third oxide;

    performing second heat treatment after the second insulator is formed;

    forming a fourth conductor over the second insulator;

    performing third heat treatment after the fourth conductor is formed;

    etching part of the fourth conductor selectively after the third heat treatment to form a fifth conductor at least part of which overlaps with the second oxide; and

    forming a third insulator over the first insulator, the second insulator, and the fifth conductor.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×