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INTEGRATED CIRCUIT LAYOUTS WITH SOURCE AND DRAIN CONTACTS OF DIFFERENT WIDTHS

  • US 20200135869A1
  • Filed: 09/24/2019
  • Published: 04/30/2020
  • Est. Priority Date: 10/31/2018
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an active region in a substrate, wherein the active region extends in a first direction;

    a gate structure extending in a second direction different from the first direction, wherein the gate structure extends across the active region; and

    a plurality of source/drain contacts extending in the second direction and overlapping a plurality of source/drain regions in the active region on opposite sides of the gate structure, wherein a first source/drain contact of the plurality of source/drain contacts has a first width, and a second source/drain contact of the plurality of source/drain contacts has a second width less than the first width.

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