SEMICONDUCTOR DEVICE

• US 20200135870A1
• Filed: 09/10/2019
• Published: 04/30/2020
• Est. Priority Date: 10/26/2018
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation), Toshiba Electronic Devices & Storage Corporation (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Kajiwara, Yosuke, Shindome, Aya, Kuraguchi, Masahiko
• Granted Patent: US 10,937,875 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 2224/05559 non conformal layer on a patterned surface
• CPC Class Codes: H01L 2224/05572 the external layer extending out of an opening
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/402 Field plates
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/4175 for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
• CPC Class Codes: H01L 29/41758 for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular H01L29/41733 - H01L29/4175 take precedence
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/7786 with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence
• CPC Class Codes: H01L 29/7831 with multiple gate structure FinFETs or MuGFETs H01L29/7855, thin film transistors H01L29/78645
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group

Abstract

According to one embodiment, a semiconductor device includes a semiconductor member, drain electrodes, a drain interconnect portion, and a drain conductive portion. The semiconductor member includes first and second semiconductor regions. The drain electrodes extend along a first direction, are arranged in a second direction crossing the first direction, and are provided at the first semiconductor region. A direction from the first semiconductor region toward the second semiconductor region is aligned with the first direction. The drain interconnect portion extends along the second direction and is electrically connected to the drain electrodes. The drain conductive portion is electrically connected to the drain interconnect portion. The drain conductive portion includes first and second conductive regions. A portion of the drain interconnect portion is between the first conductive region and the first semiconductor region in a third direction. The third direction crosses a plane including the first and second directions.

Claims

1. A semiconductor device, comprising:

a semiconductor member including a first semiconductor region and a second semiconductor region;

a plurality of drain electrodes extending along a first direction, being arranged in a second direction crossing the first direction, and being provided at the first semiconductor region, a direction from the first semiconductor region toward the second semiconductor region being aligned with the first direction;

a drain interconnect portion extending along the second direction and being electrically connected to the plurality of drain electrodes; and

a drain conductive portion electrically connected to the drain interconnect portion, the drain conductive portion including a first conductive region and a second conductive region, a portion of the drain interconnect portion being between the first conductive region and the first semiconductor region in a third direction, the third direction crossing a plane including the first direction and the second direction, a direction from the second semiconductor region toward the second conductive region being aligned with the third direction.

2. The device according to claim 1, wherein end portions of the plurality of drain electrodes are between the drain interconnect portion and the first semiconductor region in the third direction.

3. The device according to claim 1, further comprising an insulating portion including an insulating region provided between the second semiconductor region and the second conductive region in the third direction,

the insulating region contacting the second semiconductor region and the second conductive region.

4. The device according to claim 1, wherein

the drain conductive portion further includes a third conductive region, and

the third conductive region is provided between the first conductive region and the drain interconnect portion and electrically connects the first conductive region to the drain interconnect portion.

5. The device according to claim 1, wherein

the drain interconnect portion includes:

a second-direction extension portion extending along the second direction; and

a connection portion electrically connecting the second-direction extension portion and one of the plurality of drain electrodes.

6. The device according to claim 5, wherein a distance along the third direction between the semiconductor member and the second conductive region is longer than a distance along the third direction between the semiconductor member and the second-direction extension portion.

7. The device according to claim 5, further comprising:

a plurality of source electrodes extending along the first direction and being provided at the first semiconductor region;

a source interconnect portion extending along the second direction and being electrically connected to the plurality of source electrodes; and

a gate conductive member electrically connected to one of a plurality of gate electrodes,

the one of the plurality of gate electrodes being between one of the plurality of source electrodes and the one of the plurality of drain electrodes,

a position in the second direction of an end portion of the gate conductive member being between a position in the second direction of the one of the plurality of gate electrodes and a position in the second direction of the one of the plurality of drain electrodes,

a distance along the third direction between the semiconductor member and the drain conductive portion being substantially the same as a distance along the third direction between the semiconductor member and the gate conductive member.

8. The device according to claim 1, further comprising:

a plurality of gate electrodes extending along the first direction and being provided at the first semiconductor region; and

a gate interconnect portion extending along the second direction and being electrically connected to the plurality of gate electrodes,

one of the plurality of gate electrodes being between one of the plurality of drain electrodes and an other one of the plurality of drain electrodes,

a distance along the third direction between the semiconductor member and the second conductive region being longer than a distance along the third direction between the semiconductor member and the gate interconnect portion.

9. The device according to claim 8, wherein

the semiconductor member further includes a third semiconductor region,

the first semiconductor region is provided between the third semiconductor region and the second semiconductor region, and

a direction from the third semiconductor region toward the gate interconnect portion is aligned with the third direction.

10. The device according to claim 8, further comprising:

a plurality of source electrodes extending along the first direction and being provided at the first semiconductor region; and

a source interconnect portion extending along the second direction and being electrically connected to the plurality of source electrodes,

the one of the plurality of gate electrodes being between one of the plurality of source electrodes and the one of the plurality of drain electrodes,

a direction from the source interconnect portion toward the drain conductive portion being aligned with the first direction.

11. The device according to claim 1, further comprising:

a plurality of source electrodes extending along the first direction and being provided at the first semiconductor region; and

a source interconnect portion extending along the second direction and being electrically connected to the plurality of source electrodes,

one of the plurality of source electrodes being between one of the plurality of drain electrodes and an other one of the plurality of drain electrodes,

a distance along the third direction between the semiconductor member and the second conductive region being longer than a distance along the third direction between the semiconductor member and the source interconnect portion.

12. The device according to claim 11, wherein

the semiconductor member further includes a third semiconductor region,

the first semiconductor region is provided between the third semiconductor region and the second semiconductor region, and

a direction from the third semiconductor region toward the source interconnect portion is aligned with the third direction.

13. The device according to claim 1, wherein the drain interconnect portion is not between the second semiconductor region and the second conductive region in the third direction.

14. The device according to claim 1, wherein

a plurality of the drain conductive portions is provided, and

a product of a number of the plurality of drain conductive portions, a length along the third direction of the second conductive region, and a length along the second direction of one of the plurality of drain conductive portions is not less than 0.5 times and not more than 2 times a product of a number of the plurality of drain electrodes, a length along the third direction of one of the plurality of drain electrodes, and a length along the second direction of the one of the plurality of drain electrodes.

15. The device according to claim 1, wherein

a plurality of the drain conductive portions is provided, and

a number of the plurality of drain electrodes is not less than 4 times and not more than 20 times a number of the plurality of drain conductive portions.

16. A semiconductor device, comprising:

a semiconductor member including a first semiconductor region and a second semiconductor region;

a plurality of drain electrodes extending along a first direction, being arranged in a second direction crossing the first direction, and being provided at the first semiconductor region, a direction from the first semiconductor region toward the second semiconductor region being aligned with the first direction; and

a drain conductive member including a drain interconnect portion and a drain conductive portion, the drain interconnect portion extending along the second direction and being electrically connected to the plurality of drain electrodes, a direction from a portion of the plurality of drain electrodes toward the drain interconnect portion being aligned with a third direction, the third direction crossing a plane including the first direction and the second direction, the drain conductive portion being continuous with the drain interconnect portion, a direction from the second semiconductor region toward the drain conductive portion being aligned with the third direction.

17. The device according to claim 16, wherein a length along the second direction of the drain interconnect portion is longer than a length along the first direction of the drain conductive portion.

18. The device according to claim 16, wherein

the drain conductive portion includes a first portion and a second portion,

the second portion is between the first portion and the drain interconnect portion in the first direction, and

a length along the second direction of the second portion is longer than a length along the second direction of the first portion.

19. The device according to claim 16, wherein

the drain conductive portion includes a first portion and a second portion,

the second portion is between the first portion and the drain interconnect portion in the first direction, and

a length along the second direction of the drain conductive portion increases in an orientation from the first portion toward the drain interconnect portion.

20. The device according to claim 16, wherein a direction from the drain interconnect portion toward the drain conductive portion is aligned with the first direction.