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Integrated Circuits Having Protruding Interconnect Conductors

  • US 20200135871A1
  • Filed: 02/20/2019
  • Published: 04/30/2020
  • Est. Priority Date: 10/29/2018
  • Status: Active Grant
First Claim
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1. A method of forming an integrated circuit device, the method comprising:

  • receiving a workpiece that includes an inter-level dielectric layer;

    forming a first contact extending through the inter-level dielectric layer, wherein the first contact includes a fill material;

    recessing the inter-level dielectric layer such that the fill material extends above a top surface of the inter-level dielectric layer;

    forming an etch-stop layer on the inter-level dielectric layer such that the fill material of the first contact extends into the etch-stop layer; and

    forming a second contact extending through the etch-stop layer to couple to the first contact.

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