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DEVICE VARIATION CONTROL OF VERTICAL TRANSPORT FIN FIELD EFFECT TRANSISTOR DEVICES BY SELECTIVE OXIDE DEPOSITION FOR SHALLOW TRENCH ISOLATION FORMATION

  • US 20200135873A1
  • Filed: 10/30/2018
  • Published: 04/30/2020
  • Est. Priority Date: 10/30/2018
  • Status: Abandoned Application
First Claim
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1. A method of forming an isolation region, comprising:

  • forming a bottom source/drain layer on a substrate, wherein the substrate and the bottom source/drain layer include a semiconductor material;

    forming an isolation trench through the bottom source/drain layer into the substrate; and

    filling the isolation trench using a selective oxide deposition, wherein the oxide is selectively deposited on the surfaces of the semiconductor materials but not non-semiconductor materials, and the top surface of the deposited oxide is aligned with a top edge of the bottom source/drain layer.

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