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SELF-ALIGNED GATE CUT IN DIRECT STACKED VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR (VTFET)

  • US 20200135877A1
  • Filed: 10/29/2018
  • Published: 04/30/2020
  • Est. Priority Date: 10/29/2018
  • Status: Active Grant
First Claim
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1. A semiconductor structure, comprising:

  • a silicon on insulator (SOI) semiconductor fin comprising a dielectric fin extension;

    a first vertical transport field effect transistor (VTFET) comprising a first self-aligned gate on the dielectric fin extension;

    a second VTFET comprising a second self-aligned gate on the dielectric fin extension; and

    a gate contact extending through the dielectric fin extension through the second VTFET to the first self-aligned gate.

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