Semiconductor Device and Method of Manufacture
First Claim
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1. A method comprising:
- forming a gate stack over a substrate;
forming a first gate spacer on sidewalls of the gate stack;
forming a second gate spacer over the first gate spacer;
removing a portion of the second gate spacer, wherein at least a portion of the second gate spacer remains;
removing the first gate spacer to form a first opening; and
after removing the first gate spacer, removing the remaining portion of the second gate spacer through the first opening.
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Abstract
A semiconductor device including a gaseous spacer and a method for forming the same are disclosed. In an embodiment, a method includes forming a gate stack over a substrate; forming a first gate spacer on sidewalls of the gate stack; forming a second gate spacer over the first gate spacer; removing a portion of the second gate spacer, at least a portion of the second gate spacer remaining; removing the first gate spacer to form a first opening; and after removing the first gate spacer, removing the remaining portion of the second gate spacer through the first opening.
10 Citations
20 Claims
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1. A method comprising:
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forming a gate stack over a substrate; forming a first gate spacer on sidewalls of the gate stack; forming a second gate spacer over the first gate spacer; removing a portion of the second gate spacer, wherein at least a portion of the second gate spacer remains; removing the first gate spacer to form a first opening; and after removing the first gate spacer, removing the remaining portion of the second gate spacer through the first opening. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method comprising:
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forming a gate stack over a semiconductor substrate; forming a gate spacer on sidewalls of the gate stack; epitaxially growing source/drain regions on opposite sides of the gate stack; removing at least a portion of the gate spacer to form an opening; and depositing a dielectric layer sealing the opening and defining a gaseous spacer on sidewalls of the gate spacer. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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a gate stack over a semiconductor substrate; a first gate spacer disposed on sidewalls of the gate stack; a contact etch stop layer adjacent the first gate spacer; a gaseous spacer disposed between the gate stack and the contact etch stop layer; and an epitaxial source/drain region in the semiconductor substrate, wherein at least a portion of the gaseous spacer extends between the epitaxial source/drain region and the semiconductor substrate. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification