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Semiconductor Device and Method of Manufacture

  • US 20200135880A1
  • Filed: 04/01/2019
  • Published: 04/30/2020
  • Est. Priority Date: 10/31/2018
  • Status: Active Grant
First Claim
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1. A method comprising:

  • forming a gate stack over a substrate;

    forming a first gate spacer on sidewalls of the gate stack;

    forming a second gate spacer over the first gate spacer;

    removing a portion of the second gate spacer, wherein at least a portion of the second gate spacer remains;

    removing the first gate spacer to form a first opening; and

    after removing the first gate spacer, removing the remaining portion of the second gate spacer through the first opening.

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