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SELF-ALIGNED CONTACT WITH METAL-INSULATOR TRANSISTION MATERIALS

  • US 20200135881A1
  • Filed: 10/24/2018
  • Published: 04/30/2020
  • Est. Priority Date: 10/24/2018
  • Status: Active Grant
First Claim
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1. A method for forming a semiconductor device, the method comprising:

  • forming a dielectric cap over a conductive gate;

    forming a source or drain (S/D) region adjacent to the conductive gate;

    forming a dielectric liner over the dielectric cap and the (S/D) region such that a first portion of the dielectric liner is on a surface of the (S/D) region, the dielectric liner comprising a metal-insulator transition material; and

    metalizing the first portion of the dielectric liner.

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