SELF-ALIGNED CONTACT WITH METAL-INSULATOR TRANSISTION MATERIALS
First Claim
1. A semiconductor device comprising:
- a dielectric cap over a conductive gate;
a source or drain (S/D) region adjacent to the conductive gate; and
a conformal liner formed adjacent to a sidewall of the dielectric cap and on the S/D region;
wherein a first portion of the conformal liner is on a surface of the conductive gate, the first portion comprising a metal-doped germanium oxide; and
wherein a second portion of the conformal liner is on the S/D region, the second portion comprising a silicide or a germanide.
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Accused Products
Abstract
Embodiments of the present invention are directed to techniques for forming a self-aligned contact liner using metal-insulator transition materials. The self-aligned contact architecture described herein prevents a short between the gate and the source/drain, even when the self-aligned contact (SAC) cap has eroded to the point where the gate is exposed. In a non-limiting embodiment of the invention, a dielectric cap is formed over a conductive gate. A source or drain region is formed adjacent to the conductive gate. A dielectric liner is formed over the dielectric cap and the source or drain region such that a first portion of the dielectric liner is on a surface of the source or drain region. The dielectric liner includes a metal-insulator transition material. The first portion of the dielectric liner is metalized via germanium oxide sublimation.
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20 Claims
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1. A semiconductor device comprising:
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a dielectric cap over a conductive gate; a source or drain (S/D) region adjacent to the conductive gate; and a conformal liner formed adjacent to a sidewall of the dielectric cap and on the S/D region; wherein a first portion of the conformal liner is on a surface of the conductive gate, the first portion comprising a metal-doped germanium oxide; and wherein a second portion of the conformal liner is on the S/D region, the second portion comprising a silicide or a germanide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a conductive gate formed over a substrate; a dielectric cap over the conductive gate; a source or drain (S/D) region adjacent to the conductive gate, the S/D region recessed below a surface of the conductive gate; a sidewall spacer between the S/D region and a sidewall of the conductive gate; and a dielectric liner over the dielectric cap and the S/D region, the conformal liner conformally deposited such that a first portion of the dielectric liner is on a surface of the S/D region and a second portion of the dielectric liner is over the sidewall spacer and in direct contact with the sidewall of the conductive gate, the dielectric liner comprising a metal-insulator transition material. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification