GATE SPACER STRUCTURE OF FINFET DEVICE
First Claim
1. A device comprising:
- a gate stack over an active region of a substrate, the gate stack having a first sidewall and a second sidewall opposite to the first sidewall;
a first spacer structure along the first sidewall of the gate stack, the first spacer structure comprising;
a first L-shaped spacer along the first sidewall of the gate stack, a lateral portion of the first L-shaped spacer having a first width; and
a second spacer over the lateral portion of the first L-shaped spacer, the second spacer partially covering a top surface of the lateral portion of the first L-shaped spacer; and
a second spacer structure along the second sidewall of the gate stack, the second spacer structure comprising;
a third L-shaped spacer along the second sidewall of the gate stack, a lateral portion of the third L-shaped spacer having a second width less than the first width; and
a fourth spacer over the lateral portion of the third L-shaped spacer, the fourth spacer fully covering a top surface of the lateral portion of the third L-shaped spacer.
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Accused Products
Abstract
A method includes forming a fin extending above an isolation region. A sacrificial gate stack having a first sidewall and a second sidewall opposite the first sidewall is formed over the fin. A first spacer is formed on the first sidewall of the sacrificial gate stack. A second spacer is formed on the second sidewall of the sacrificial gate stack. A patterned mask having an opening therein is formed over the sacrificial gate stack, the first spacer and the second spacer. The patterned mask extends along a top surface and a sidewall of the first spacer. The second spacer is exposed through the opening in the patterned mask. The fin is patterned using the patterned mask, the sacrificial gate stack, the first spacer and the second spacer as a combined mask to form a recess in the fin. A source/drain region is epitaxially grown in the recess.
6 Citations
20 Claims
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1. A device comprising:
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a gate stack over an active region of a substrate, the gate stack having a first sidewall and a second sidewall opposite to the first sidewall; a first spacer structure along the first sidewall of the gate stack, the first spacer structure comprising; a first L-shaped spacer along the first sidewall of the gate stack, a lateral portion of the first L-shaped spacer having a first width; and a second spacer over the lateral portion of the first L-shaped spacer, the second spacer partially covering a top surface of the lateral portion of the first L-shaped spacer; and a second spacer structure along the second sidewall of the gate stack, the second spacer structure comprising; a third L-shaped spacer along the second sidewall of the gate stack, a lateral portion of the third L-shaped spacer having a second width less than the first width; and a fourth spacer over the lateral portion of the third L-shaped spacer, the fourth spacer fully covering a top surface of the lateral portion of the third L-shaped spacer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A device comprising:
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a gate stack over an active region of a substrate, the gate stack having a first sidewall and a second sidewall opposite to the first sidewall; a first spacer structure on the first sidewall of the gate stack, the first spacer structure comprising; a first L-shaped spacer in physical contact with the first sidewall of the gate stack, a lateral portion of the first L-shaped spacer extending away from the first sidewall of the gate stack to a first distance; and a second spacer adjacent the first L-shaped spacer, the second spacer having a first width, the first L-shaped spacer extending along a sidewall and a bottom surface of the second spacer; and a second spacer structure on the second sidewall of the gate stack, the second spacer structure comprising; a third L-shaped spacer in physical contact with the second sidewall of the gate stack, a lateral portion of the third L-shaped spacer extending away from the second sidewall of the gate stack to a second distance less than the first distance; and a fourth spacer adjacent the third L-shaped spacer, the fourth spacer having the first width, the third L-shaped spacer extending along a sidewall and a bottom surface of the fourth spacer. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A device comprising:
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a gate stack over an active region of a substrate, the gate stack having a first sidewall and a second sidewall opposite to the first sidewall; a first gate spacer structure along the first sidewall of the gate stack, the first gate spacer structure comprising a first L-shaped gate spacer, a lateral portion of the first L-shaped gate spacer having a first width; a second gate spacer structure along the second sidewall of the gate stack, the second gate spacer structure comprising a second L-shaped gate spacer, a lateral portion of the second L-shaped gate spacer having a second width less than the first width; a first epitaxial region adjacent the first gate spacer structure, the first epitaxial region having a third width; and a second epitaxial region adjacent the second gate spacer structure, the second epitaxial region having a fourth width less than the third width. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification