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GATE SPACER STRUCTURE OF FINFET DEVICE

  • US 20200135892A1
  • Filed: 12/23/2019
  • Published: 04/30/2020
  • Est. Priority Date: 04/28/2017
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a gate stack over an active region of a substrate, the gate stack having a first sidewall and a second sidewall opposite to the first sidewall;

    a first spacer structure along the first sidewall of the gate stack, the first spacer structure comprising;

    a first L-shaped spacer along the first sidewall of the gate stack, a lateral portion of the first L-shaped spacer having a first width; and

    a second spacer over the lateral portion of the first L-shaped spacer, the second spacer partially covering a top surface of the lateral portion of the first L-shaped spacer; and

    a second spacer structure along the second sidewall of the gate stack, the second spacer structure comprising;

    a third L-shaped spacer along the second sidewall of the gate stack, a lateral portion of the third L-shaped spacer having a second width less than the first width; and

    a fourth spacer over the lateral portion of the third L-shaped spacer, the fourth spacer fully covering a top surface of the lateral portion of the third L-shaped spacer.

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