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APPARATUS AND CIRCUITS WITH DUAL THRESHOLD VOLTAGE TRANSISTORS AND METHODS OF FABRICATING THE SAME

  • US 20200135911A1
  • Filed: 09/19/2019
  • Published: 04/30/2020
  • Est. Priority Date: 10/31/2018
  • Status: Active Grant
First Claim
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1. A semiconductor structure, comprising:

  • a substrate;

    an active layer that is formed over the substrate and comprises a first active portion having a first thickness and a second active portion having a second thickness;

    a first transistor comprising a first source region, a first drain region, and a first gate structure formed over the first active portion and between the first source region and the first drain region; and

    a second transistor comprising a second source region, a second drain region, and a second gate structure formed over the second active portion and between the second source region and the second drain region, wherein the first thickness is different from the second thickness.

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