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CRYSTALLINE SEMICONDUCTOR LAYER FORMED IN BEOL PROCESSES

  • US 20200135930A1
  • Filed: 09/27/2019
  • Published: 04/30/2020
  • Est. Priority Date: 10/31/2018
  • Status: Active Grant
First Claim
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1. A structure, comprising:

  • a substrate;

    a first dielectric layer over the substrate;

    a crystalline second dielectric layer over the first dielectric layer; and

    a first crystalline semiconductor layer over the crystalline second dielectric layer.

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