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TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, DISPLAY SUBSTRATE, AND DISPLAY APPARATUS

  • US 20200135931A1
  • Filed: 05/31/2019
  • Published: 04/30/2020
  • Est. Priority Date: 10/24/2018
  • Status: Active Grant
First Claim
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1. A transistor, comprising:

  • a substrate;

    an active region provided on the substrate and comprising a polycrystalline silicon region;

    an etch stop layer provided at a side of the polycrystalline silicon region distal to the substrate; and

    a first heavily doped amorphous silicon region and a second heavily doped amorphous silicon region both provided at a side of the etch stop layer distal to the substrate;

    wherein the polycrystalline silicon region has a first side surface corresponding to the first heavily doped amorphous silicon region and a second side surface corresponding to the second heavily doped amorphous silicon region; and

    an orthographic projection of the polycrystalline silicon region on a plane in which a lower surface of the etch stop layer lies does not go beyond the lower surface of the etch stop layer, and an orthographic projection, on the plane in which the lower surface of the etch stop layer lies, of at least one of the first side surface and the second side surface of the polycrystalline silicon region is located within the lower surface of the etch stop layer.

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