SENSING DEVICE AND SENSING METHOD

• US 20200135949A1
• Filed: 01/18/2019
• Published: 04/30/2020
• Est. Priority Date: 10/25/2018
• Status: Active Grant

• Current Assignee: Interface Optoelectronics (ShenZhen) Co., Ltd. (Cloud Software Group), General Interface Solution Limited (General Interface Solution (GIS) Holding Ltd.), Interface Technology (Chengdu) Co., Ltd.
• Original Assignee: Interface Optoelectronics (ShenZhen) Co., Ltd. (Cloud Software Group), General Interface Solution Limited (General Interface Solution (GIS) Holding Ltd.), Interface Technology (Chengdu) Co., Ltd.
• Inventors: CHEN, YU-JU
• Granted Patent: US 10,749,057 B2
• Time in Patent Office: Days
• CPC Class Codes: G06V 40/10 Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
• CPC Class Codes: G06V 40/14 Vascular patterns
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 27/146 Imager structures
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 31/032 including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
• CPC Class Codes: H01L 31/0328 including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
• CPC Class Codes: H01L 31/035218 the quantum structure being quantum dots
• CPC Class Codes: H01L 31/112 characterised by field-effect operation, e.g. junction field-effect phototransistor
• CPC Class Codes: H01L 31/1136 the device being a metal-insulator-semiconductor field-effect transistor
• CPC Class Codes: H01L 31/167 the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
• CPC Class Codes: H01L 31/173 formed in, or on, a common substrate
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table

Abstract

A device for sensing suspension operations or biometrics includes a light emitting module and a sensing layer. The light emitting module and the sensing layer are sequentially stacked. The light emitting module includes a plurality of light emitting elements emitting light near the infrared and the sensing layer includes a plurality of quantum dot thin film transistors. The quantum dot thin film transistor includes an active layer and quantum dots covering the active layer. The near-infrared light emitted by the plurality of light emitting elements is reflected by an animate object and received by the quantum dot thin film transistors. The sensing device can better sense suspension operations or biometrics. A method for the procedure is also disclosed.

Claims

1. A sensing device, comprising:

a display panel, wherein the display panel comprises light emitting elements, the light elements comprise a plurality of first light emitting elements adapted for displaying and a plurality of second light emitting elements adapted for sensing, each of the plurality of second light emitting elements emits light of a wavelength of near infrared light;

a sensing layer, wherein the sensing layer is stacked with the light emitting elements, the sensing layer comprises a plurality of quantum dot thin film transistors, and each of the plurality of quantum dot thin film transistors comprises a channel layer and a quantum dot layer covering the channel layer;

wherein the plurality of quantum dot thin film transistors receive reflected light of the light emitted by the plurality of second light emitting elements.

2. The sensing device of claim 1, wherein the plurality of first light emitting elements and the plurality of second light emitting elements are on a same layer.

3. The sensing device of claim 1, wherein the display panel defines a plurality of pixel units, each of the plurality of pixel units comprises at least one of the first light emitting elements and at least one of the second light emitting elements.

4. The sensing device of claim 3, wherein each of the plurality of pixel units comprises one of the first light emitting elements that emits red light, one of the first light emitting elements that emits green light, one of the first light emitting elements that emits blue light, and one of the second light-emitting elements.

5. The sensing device of claim 1, wherein the sensing layer is between the display panel and an exterior of the sensing device.

6. The sensing device of claim 1, wherein the sensing device further comprises a black matrix, the plurality of first light emitting elements and the plurality of second light emitting elements are spaced apart by the black matrix, a projection of each of the plurality of quantum dot thin film transistor on the display panel is overlapped with the black matrix.

7. The sensing device of claim 1, wherein each of the plurality of quantum dot thin film transistors further comprises a gate electrode, a gate insulating layer, a source electrode, a drain electrode and an insulating layer covering the source electrode, drain electrode and the quantum dot layer.

8. The sensing device of claim 1, wherein the light emitting elements are arranged in an array.

9. The sensing device of claim 1, wherein the near infrared light emitted by the plurality of second light emitting elements has a wavelength between 830 nm and 1550 nm.

10. The sensing device of claim 1, wherein a particle diameter of a quantum dot in the quantum dot layer is between 3 nm and 9 nm.

11. A sensing device, comprising:

a light emitting module, wherein the light emitting module comprises light emitting elements for sensing, each of the light emitting elements emits light of a wavelength of near infrared light;

a sensing layer, wherein the sensing layer is stacked with the light emitting elements, the sensing layer comprises a plurality of quantum dot thin film transistors, and each of the plurality of quantum dot thin film transistors comprises an channel layer and a quantum dot layer covering the channel layer;

wherein the plurality of quantum dot thin film transistor receive reflected light of the light emitted by the light emitting elements.

12. The sensing device of claim 11, wherein the sensing device is coupled to a display device by a conductive line.

13. The sensing device of claim 11, wherein each of the plurality of quantum dot thin film transistors further comprises a gate electrode, a gate insulating layer, a source electrode, a drain electrode and an insulating layer covering the source electrode, drain electrode and the quantum dot layer.

14. The sensing device of claim 11, wherein the light emitting elements are arranged in an array.

15. A method for sensing, comprises:

providing a sensing device having a plurality of quantum dot thin film transistors, wherein the sensing device emits light of a wavelength of near infrared light;

suspending the object to be sensed above the sensing device, wherein the near infrared light is reflected by an exterior of the sensing device;

receiving the reflected near infrared light by the quantum dot thin film transistors, wherein the reflected near infrared light changes electrical signals transmitting through the QD TFTs; and

feeding back the electrical signal transmitting through the QD TFTs to a data processor of the sensing device to obtain a sensing result.

16. The method of claim 15, wherein a quantum dot in each of the plurality of quantum dot thin film transistors generates a current according to the reflected near infrared light, so that the conductivity of a channel layer in each of the plurality of quantum dot thin film transistors is changed, thereby changing a electrical flow through each of the plurality of quantum dot thin film transistors.