QUANTUM DOT DISPLAY DEVICE

• US 20200135967A1
• Filed: 10/21/2019
• Published: 04/30/2020
• Est. Priority Date: 10/26/2018
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: CHO, Oul, JANG, Eun Joo, KIM, Tae Hyung
• Granted Patent: US 11,784,282 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H10K 50/115 comprising active inorganic nanostructures, e.g. luminescent quantum dots
• CPC Class Codes: H10K 59/873 Encapsulations

Abstract

A quantum dot display device includes a substrate, a quantum dot diode disposed on the substrate and including a first electrode, a second electrode, and a quantum dot layer between the first electrode and the second electrode, and an encapsulation film disposed on a surface of the quantum dot diode, wherein a water vapor transmission rate of the encapsulation film is about 0.001 to about 1 gram per square meter per day at 1 atmosphere of pressure.

Claims

1. A quantum dot display device, comprising

a substrate,

a quantum dot diode on the substrate, the quantum dot diode comprising a first electrode, a second electrode, and a quantum dot layer between the first electrode and the second electrode, and

an encapsulation film on a surface of the quantum dot diode,

wherein a water vapor transmission rate of the encapsulation film is about 0.001 to about 1 gram per square meter per day at 1 atmosphere of pressure.

2. The quantum dot display device of claim 1, wherein the encapsulation film is disposed on a first surface of the quantum dot diode and a second surface of the quantum dot diode, the second surface of the quantum dot diode being opposite the first surface of the quantum dot diode.

3. The quantum dot display device of claim 1, wherein the encapsulation film consists of two layers.

4. The quantum dot display device of claim 3, wherein the encapsulation film comprises an organic film.

5. The quantum dot display device of claim 4, wherein the organic film comprises a thiol resin, an epoxy resin, or a combination thereof.

6. The quantum dot display device of claim 3, wherein the encapsulation film comprises an inorganic film.

7. The quantum dot display device of claim 6, wherein the inorganic film comprises an oxide, a nitride, an oxynitride, or a combination thereof.

8. The quantum dot display device of claim 3, wherein the encapsulation film comprises an organic film and an inorganic film.

9. The quantum dot display device of claim 1, further comprising a primer layer on the encapsulation film, the primer layer being thinner than the encapsulation film.

10. The quantum dot display device of claim 1, wherein the encapsulation film is disposed between the substrate and the quantum dot diode.

11. The quantum dot display device of claim 1, wherein

a first surface of the substrate faces the quantum dot diode,

a second surface of the substrate is opposite the first surface of the substrate,

the second surface of the substrate does not face the quantum dot diode, and

the encapsulation film is disposed on the second surface of the substrate.

12. The quantum dot display device of claim 1, wherein the encapsulation film is disposed directly on the quantum dot diode.

13. The quantum dot display device of claim 1, further comprising a second substrate facing the substrate, the second substrate being disposed on a surface of the encapsulation film.

14. The quantum dot display device of claim 1, further comprising a sealant disposed between the quantum dot diode and the encapsulation film.

15. The quantum dot display device of claim 1, wherein a water vapor transmission rate of the encapsulation film is about 0.01 to about 1 gram per square meter per day at 1 atmosphere of pressure.

16. The quantum dot display device of claim 1, wherein an oxygen transmission rate of the encapsulation film is about 0.001 to about 1 cubic centimeter per square meter per day at 1 atmosphere of pressure.

17. The quantum dot display device of claim 1, wherein the quantum dot layer comprises a core-shell quantum dot, and

the core-shell quantum dot comprises

a core comprising

zinc and

tellurium, selenium, or a combination thereof, and

a shell disposed on at least one part of the core, the shell having a composition different from a composition of the core.

18. The quantum dot display device of claim 17, wherein the shell comprises ZnSeS, ZnS, or a combination thereof.

19. The quantum dot display device of claim 1, wherein

the quantum dot layer comprises a core-shell quantum dot,

the core-shell quantum dot comprises

a core comprising

indium and

zinc, phosphorus, or a combination thereof, and

a shell disposed on at least one part of the core, the shell having a composition different from a composition the core.

20. The quantum dot display device of claim 19, wherein the shell comprises ZnSeS, ZnS, or a combination thereof.

21. The quantum dot display device of claim 1, wherein the quantum dot display device is bendable, foldable, curved, or rollable.

22. A quantum dot display device, comprising

a substrate,

a quantum dot diode on the substrate, the quantum dot diode comprising

a first electrode,

a second electrode, and

a quantum dot layer between the first electrode and the second electrode, the quantum dot layer comprising a core-shell quantum dot comprising

a core comprising

zinc and

tellurium, selenium, or a combination thereof, and

a shell disposed on at least one part of the core, the shell having a composition different from a composition of the core, the shell comprising ZnSeS, ZnS, or a combination thereof, and

an encapsulation film on a surface of the quantum dot diode, wherein the encapsulation film

consists of two layers,

comprises an organic film comprising a thiol resin, an epoxy resin, or a combination thereof, and

comprises an inorganic film comprising an oxide, a nitride, an oxynitride, or a combination thereof.