LIGHT EMITTING BIPOLAR TRANSISTOR

• US 20200135968A1
• Filed: 10/30/2019
• Published: 04/30/2020
• Est. Priority Date: 10/31/2018
• Status: Active Application

• Current Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Original Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Inventors: Daami, Anis, Ferron, Alexandre, Suhm, Aurelien
• Application Number:
  US16/668,954
• Publication Number:
  US 20200135968A1
• Time in Patent Office: Days
• CPC Class Codes: H01L 29/0821 Collector regions of bipolar transistors
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/205 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/7371 Vertical transistors
• CPC Class Codes: H01L 33/0016 having at least two p-n junctions
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/0041 characterised by field-effect operation
• CPC Class Codes: H01L 33/0062 for devices with an active region comprising only III-V compounds
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A light emitting bipolar transistor, comprising at least:

• • first, second and third portions of doped semiconductor, forming a collector, a base and an emitter respectively of the light emitting bipolar transistor;
  • at least one quantum well arranged in the first portion and between two first barrier layers formed by the doped semiconductor of the first portion;
  • and in which the levels of the energy bands of the doped semiconductor of the first portion are higher than those of a semiconductor forming the quantum well which is configured to produce the light emission of the bipolar transistor.

Claims

1. A light emitting bipolar transistor, comprising at least:

first, second and third portions of doped semiconductor, forming a collector, a base and an emitter respectively of the light emitting bipolar transistor;

at least one quantum well arranged in the first portion and between two first barrier layers formed by the doped semiconductor of the first portion,

and in which the levels of the energy bands of the doped semiconductor of the first portion are higher than those of a semiconductor forming said at least one quantum well which is configured to produce the light emission of the bipolar transistor.

2. The light emitting bipolar transistor according to claim 1, wherein:

in a first part of the first portion, the levels of the energy bands of the doped semiconductor of this first part have first values;

the levels of the energy bands of the doped semiconductor of the second portion have second values different from the first values;

in a second part of the first portion arranged between the first part of the first portion and the second portion, the levels of energy bands of the doped semiconductor in this second part vary passing from the first values to the second values;

said at least one quantum well is arranged in the second part of the first portion.

3. The light emitting bipolar transistor according to claim 2, also comprising a second barrier layer arranged in the second part of the first portion and such that said at least one quantum well is located between the second barrier layer and the second portion.

4. The light emitting bipolar transistor according to claim 1, comprising several quantum wells arranged in the first portion, and such that each quantum well is separated from a neighbouring quantum well by at least one intermediate barrier layer formed by the doped semiconductor of the first portion.

5. The light emitting bipolar transistor according to claim 1, wherein:

the first, second and third portions comprise GaN, and said at least one quantum well comprises InGaN, or

the first, second and third portions comprise GaAs, and said at least one quantum well comprises InGaAs, or

the first, second and third portions comprise InP, and said at least one quantum well comprises GaInP, or

the first, second and third portions comprise AlGaAs, and said at least one quantum well comprises InAlGaAs.

6. The light emitting bipolar transistor according to claim 1, wherein the atomic composition of the doped semiconductor of the first portion is different from the atomic composition of the doped semiconductor of the second and/or the third portion(s).

7. A light emitting device comprising:

at least one light emitting bipolar transistor according to claim 1,

at least one circuit for biasing said at least one light emitting bipolar transistor, configured to bias said at least one light emitting bipolar transistor in common emitter.

8. The light emitting device according to claim 7, comprising a matrix of light emitting bipolar transistors forming a screen.

9. A method of making a light emitting bipolar transistor according to claim 1, in which the first, second and third portions and said at least one quantum well are made using epitaxy and doping steps.