MICRO-LED STRUCTURES FOR FULL COLOR DISPLAYS AND METHODS OF MANUFACTURING THE SAME

• US 20200135970A1
• Filed: 12/26/2019
• Published: 04/30/2020
• Est. Priority Date: 12/26/2019
• Status: Active Grant

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Dasgupta, Sansaptak, Ahmed, Khaled, Pancholi, Anup
• Granted Patent: US 11,245,053 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

Micro-LED structures for full color displays and methods of manufacturing the same are disclosed. An apparatus for a micro-LED display includes a first portion of a nanorod and a second portion of the nanorod. The first and second portions including gallium and nitrogen. The apparatus includes a polarization inversion layer between the first portion and the second portion. The apparatus includes a cap at an end of the nanorod. The cap including a core and an active layer. The core including gallium and nitrogen. The active layer including indium.

Claims

1. An apparatus for a micro-LED display, the apparatus comprising:

a first portion of a nanorod;

a second portion of the nanorod, the first and second portions including gallium and nitrogen;

a polarization inversion layer between the first portion and the second portion; and

a cap at an end of the nanorod, the cap including a core and an active layer, the core including gallium and nitrogen, the active layer including indium.

2. The apparatus of claim 1, wherein the indium in the active layer has a concentration of at least 45%.

4. The apparatus of claim 1, wherein the active layer enables emission of red light, an emission spectrum of the red light is associated with a full width half maximum value of less than 60 nm.

5. The apparatus of claim 1, wherein the nanorod is a first nanorod, the cap is a first cap, and the active layer is a first active layer, the first nanorod, the first cap, and the first active layer associated with a first micro-LED, the apparatus further including:

a second nanorod associated with a second micro-LED; and

a second cap including a second active layer, the second cap and the second active layer associated with a second micro-LED, the first micro-LED to emit at least one of red light or infrared light, the second micro-LED to emit at least one of blue light or green light.

6. The apparatus of claim 5, wherein the first and second micro-LEDs are fabricated on a single silicon wafer.

7. The apparatus of claim 5, wherein the polarization inversion layer is a first polarization inversion layer, the second nanorod including a second polarization inversion layer between different portions of the second nanorod.

8. The apparatus of claim 5, wherein the second nanorod does not include a polarization inversion layer.

9. The apparatus of claim 1, wherein the polarization inversion layer includes at least one of aluminum, oxygen, magnesium, silicon, or carbon.

10. The apparatus of claim 1, wherein the cap is a first cap, and further including a plurality of caps including the first cap, the plurality of caps corresponding to a plurality of micro-LEDs, the plurality of micro-LEDs including a red micro-LED, a green micro-LED, a blue micro-LED, and at least one of an infrared micro-LED or a near-infrared micro-LED.

11. The apparatus of claim 10, wherein the at least one of the infrared micro-LED or the near-infrared micro-LED is to be used as a sensor.

15. The apparatus of claim 1, further including:

a release layer positioned between the nanorod and a silicon substrate; and

a transition layer positioned between the release layer and the nanorod.

16. The apparatus of claim 15, further including a mask including a dielectric material, the nanorod defined by an aperture extending through the mask, the transition layer positioned between the mask and the release layer.

17. The apparatus of claim 15, further including a mask including a dielectric material, the nanorod defined by an aperture extending through the mask, the transition layer positioned within the aperture between the nanorod and the release layer.

18. The apparatus of claim 15, wherein the release layer includes at least one of titanium, hafnium, niobium, tantalum, zirconium, nitrogen, or molybdenum and the transition layer includes at least one of aluminum or nitrogen.

19. The apparatus of claim 15, wherein the transition layer is a first transition layer, and further including a second transition layer, the release layer positioned between the first and second transition layers.

3. (canceled)

12-14. -14. (canceled)

20. An apparatus comprising:

a nanorod including gallium and nitrogen;

a pyramid at an end of the nanorod, the pyramid including gallium and nitrogen;

a p-cladding layer including gallium and nitrogen; and

an active layer between the pyramid and the p-cladding layer, the active layer including greater than 50% indium.

21. The apparatus of claim 20, wherein the active layer includes a quantum well layer sandwiched between quantum barrier layers, the quantum barrier layers including indium, gallium and nitrogen, the quantum well layer including indium and nitrogen, the quantum well layer not including gallium.

23. The apparatus of claim 20, wherein the nanorod is a first nanorod, the pyramid is a first pyramid, and the active layer is a first active layer, the apparatus further including:

a first micro-LED including the first nanorod, the first pyramid, and the first active layer associated with a first micro-LED

a second micro-LED including a second nanorod, a second pyramid, and a second active layer associated with a first micro-LED, the second active layer including less indium than the first active layer, the first micro-LED corresponding to one of a red micro-LED or an infrared micro-LED, the second micro-LED corresponds to one of a blue micro-LED or a green micro-LED.

27. The apparatus of claim 20, wherein the pyramid has a hexagonal shape.

28. The apparatus of claim 20, wherein the pyramid is peaked.

29. The apparatus of claim 20, wherein the pyramid is truncated.

22. (canceled)

24-26. -26. (canceled)

30-33. -33. (canceled)

34. An apparatus for a micro-LED display, the apparatus comprising:

a first portion of a nanorod;

a second portion of the nanorod, the first and second portions including gallium and nitrogen;

means for inverting a polarity of the second portion of the nanorod relative to the first portion of the nanorod;

a pyramid at an end of the nanorod, the pyramid including gallium and nitrogen; and

an active layer, the active layer including indium to enable emission of red light with an internal quantum efficiency of at least 15%.

37. The apparatus of claim 34, wherein the nanorod is a first nanorod, the pyramid is a first pyramid, and the active layer is a first active layer, the apparatus further including:

a red micro-LED, the red micro-LED including the first nanorod, the first pyramid, and the first active layer; and

a second micro-LED, the second micro-LED including a second nanorod, a second pyramid, and a second active layer, the second micro-LED to emit a different wavelength of light than the red micro-LED, the red micro-LED and the second micro-LED fabricated on a single silicon wafer.

41. The apparatus of claim 37, wherein both the first and second nanorods include the means for inverting the polarity.

42. The apparatus of claim 37, wherein the first nanorod includes the means for inverting the polarity, the second nanorod not including the means for inverting the polarity.

35-36. -36. (canceled)

38-40. -40. (canceled)

43-46. -46. (canceled)