LIGHT EMITTING ELEMENT
First Claim
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1. A light emitting element comprising:
- an n-side semiconductor layer made of a nitride semiconductor;
a p-side semiconductor layer made of a nitride semiconductor; and
an active layer disposed between the n-side semiconductor and the p-side semiconductor layer and having a multi-quantum well structure in which a plurality of nitride semiconductor well layers and a plurality of nitride semiconductor barrier layers are alternately stacked,wherein the light emitting element comprises, between at least one of the plurality of well layers and the barrier layer disposed adjacent thereto on the p-side semiconductor side;
a first layer and a second layer disposed successively from the well layer side,wherein a band gap of the first layer is larger than a band gap of each of the well layers,wherein a thickness of the first layer is lower than a thickness of each of the well layers, andwherein a band gap of the second layer is smaller than the band gap of the first layer and smaller than the band gap of each of the barrier layers,wherein a thickness of the second layer is lower than the thickness of each of the well layers.
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Abstract
A light emitting element includes: an n-side semiconductor layer made of a nitride semiconductor; a p-side semiconductor layer made of a nitride semiconductor; and an active layer disposed between the n-side semiconductor and the p-side semiconductor layer and having a multi-quantum well structure in which a plurality of nitride semiconductor well layers and a plurality of nitride semiconductor barrier layers are alternately stacked, wherein the light emitting element includes, between at least one of the plurality of well layers and the barrier layer disposed adjacent thereto on the p-side semiconductor side: a first layer and a second layer disposed successively from the well layer side.
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19 Claims
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1. A light emitting element comprising:
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an n-side semiconductor layer made of a nitride semiconductor; a p-side semiconductor layer made of a nitride semiconductor; and an active layer disposed between the n-side semiconductor and the p-side semiconductor layer and having a multi-quantum well structure in which a plurality of nitride semiconductor well layers and a plurality of nitride semiconductor barrier layers are alternately stacked, wherein the light emitting element comprises, between at least one of the plurality of well layers and the barrier layer disposed adjacent thereto on the p-side semiconductor side; a first layer and a second layer disposed successively from the well layer side, wherein a band gap of the first layer is larger than a band gap of each of the well layers, wherein a thickness of the first layer is lower than a thickness of each of the well layers, and wherein a band gap of the second layer is smaller than the band gap of the first layer and smaller than the band gap of each of the barrier layers, wherein a thickness of the second layer is lower than the thickness of each of the well layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Current AssigneeNichia Corporation
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Original AssigneeNichia Corporation
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InventorsABE, Makoto
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Application NumberUS16/660,104Publication NumberTime in Patent OfficeDaysField of SearchUS Class CurrentCPC Class CodesH01L 33/0008 having p-n or hi-lo junctionsH01L 33/06 within the light emitting r...H01L 33/32 containing nitrogen
