MULTI-COLOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE

• US 20200135976A1
• Filed: 10/22/2019
• Published: 04/30/2020
• Est. Priority Date: 10/29/2018
• Status: Active Grant

• Current Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Original Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Inventors: Dussaigne, Amelie
• Granted Patent: US 11,424,386 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/18 within the light emitting region
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/325 characterised by the doping materials

Abstract

A light-emitting device including first, second, and third pixels, wherein: the first pixel includes a two-dimensional light-emitting cell including a vertical stack of a first semiconductor layer of a first conductivity type, of an active layer, and of a second semiconductor layer of the second conductivity type; each of the second and third pixels includes a three-dimensional light-emitting cell including a plurality of nanostructures of same dimensions regularly distributed across the surface of the pixel, each nanostructure including a doped pyramidal semiconductor core of the first conductivity type, an active layer coating the lateral walls of the core, and a doped semiconductor layer of the second conductivity type coating the active layer; and the nanostructures of the second and third pixels have different dimensions and/or a different spacing.

Claims

1. A light-emitting device comprising first, second, and third pixels capable of respectively emitting in first, second, and third wavelength ranges, wherein:

the first pixel comprises a two-dimensional light-emitting cell comprising a vertical stack of a first doped semiconductor layer of a first conductivity type, of an active layer, and of a second doped semiconductor layer of the second conductivity type;

each of the second and third pixels comprises a three-dimensional light-emitting cell comprising a plurality of nanostructures of same dimensions regularly distributed across the surface of the pixel, each nanostructure comprising a doped pyramidal semiconductor core of the first conductivity type, an active layer coating the lateral walls of the core, and a doped semiconductor layer of the second conductivity type coating the active layer; and

the nanostructures of the second and third pixels have different dimensions and/or a different spacing, the device further comprising a substantially planar base semiconductor layer having a surface coated with a substantially planar dielectric masking layer, the masking layer comprising, opposite the first pixel, a single opening laterally delimiting the first semiconductor layer of the first pixel and, opposite each of the second and third pixels, a plurality of openings laterally delimiting the semiconductor cores of the second and third pixels, the first semiconductor layer of the first pixel and the semiconductor cores of the second and third pixels being arranged on top of and in contact with said surface of the base semiconductor layer, in said openings.

2. The device of claim 1, wherein, in each of the first, second, and third pixels, the active layer comprises an alternation of semiconductor layers of a first material and of semiconductor layers of a second material defining multiple quantum wells.

3. The device of claim 2, wherein, in each of the first, second, and third pixels, the first material is InGaN and the second material is GaN or InGaN having an indium concentration smaller than that of the first material.

4. The device of claim 1, wherein the first semiconductor layer of the first pixel and the semiconductor cores of the second and third pixels are made of N-type doped GaN or of N-type doped InGaN.

5. The device of claim 1, wherein the second semiconductor layer of the first pixel and the doped semiconductor layers of the second conductivity type of the second and third pixels are made of P-type doped GaN or of P-type doped InGaN.

6. A method of manufacturing the device of claim 1, wherein the first semiconductor layer of the first pixel and the semiconductor cores of the second and third pixels are simultaneously formed during a same epitaxy step.

7. The method of claim 6, wherein the first semiconductor layer of the first pixel and the semiconductor cores of the second and third pixels are formed by local epitaxy on a surface of a base semiconductor layer coated with a dielectric masking layer.

8. The method of claim 7, wherein the dielectric masking layer comprises, opposite each of the second and third pixels, a plurality of openings regularly distributed across the entire surface of the light-emitting cell of the pixel.

9. The method of claim 8, wherein the openings are formed by etching of the dielectric masking layer opposite pores of a film having a controlled porosity formed based on block copolymers.

10. The method of claim 6, wherein the active layers of the first, second, and third pixels are formed simultaneously during a same epitaxy step.

11. The method of claim 10, wherein the epitaxial growth conditions on forming of the active layers of the first, second, and third pixels are the following:

growth temperature of 720°

C.+/−

30°

C.;

growth speed of 0.12 μ

m/h+/−

0.007 μ

m/h;

Indium/Gallium flow ratio between 2 and 5;

V/III semiconductor ratio greater than 5,000; and

pressure in the order of 400 mbar.

12. The method of claim 6, wherein the semiconductor layer of the first pixel and the semiconductor layers of the second and third pixels are simultaneously formed during a same epitaxy step.