Method for Producing an Optoelectronic Component and Optoelectronic Component

• US 20200135980A1
• Filed: 07/06/2017
• Published: 04/30/2020
• Est. Priority Date: 07/06/2017
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: LIM, Choo Kean, OR, Choon Keat, LIM, Choon Kim, CHAN, Ai Cheng
• Granted Patent: US 10,854,788 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/6836 Wafer tapes, e.g. grinding or dicing support tapes adhesive tapes in general C09J7/20
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2224/96 the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/52 Encapsulations
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a method includes attaching a plurality of optoelectronic semiconductor chips on predetermined locations of an intermediate film, providing a cavity film with a plurality of separated openings, attaching the cavity film to the intermediate film such that each optoelectronic semiconductor chip is associated with a respective opening, wherein the cavity film is thicker than the optoelectronic semiconductor chips such that the cavity film exceeds the optoelectronic semiconductor chips in a direction away from the intermediate film, filling a casting material in each of the openings such that the optoelectronic semiconductor chips are casted with the casting material and removing the intermediate film.

Claims

1-16. -16. (canceled)

17. A method for producing an optoelectronic component, the method comprising:

attaching a plurality of optoelectronic semiconductor chips on predetermined locations of an intermediate film;

providing a cavity film with a plurality of separated openings;

attaching the cavity film to the intermediate film such that each optoelectronic semiconductor chip is associated with a respective opening, wherein the cavity film is thicker than the optoelectronic semiconductor chips such that the cavity film exceeds the optoelectronic semiconductor chips in a direction away from the intermediate film;

filling a casting material in each of the openings such that the optoelectronic semiconductor chips are casted with the casting material; and

removing the intermediate film.

18. The method according to claim 17, wherein the intermediate film and the cavity film are each provided in form of a reel, wherein attaching the cavity film to the intermediate film comprises attaching the cavity film to the intermediate film in a reel-to-reel process in which the intermediate film and the cavity film are unrolled simultaneously and connected to each other thereafter.

19. The method according to claim 18, wherein the cavity film is patterned with the openings after being unrolled and before being attached to the intermediate film.

20. The method according to claim 17, further comprising, before filling the casting material in each opening and after attaching the cavity film to the intermediate film, attaching a phosphor layer designed for light conversion to the optoelectronic semiconductor chips.

21. The method according to claim 17, further comprising, after removing the intermediate film, singulating the cavity film in areas in between neighboring openings such that a plurality of optoelectronic components is obtained, each optoelectronic component comprising one optoelectronic semiconductor chip, wherein the optoelectronic semiconductor chip is laterally completely surrounded by a housing body formed from the cavity film.

22. The method according claim 17, wherein the intermediate film is a thermal release tape.

23. The method according to claim 17, further comprising curing the casting material after filling the casting material in each of the openings such that the casting material mechanically fixes the optoelectronic semiconductor chips inside the openings and mechanically connects the optoelectronic semiconductor chips to the cavity film.

24. The method according to claim 17, wherein the casting material is a transparent material.

25. The method according to claim 17, wherein the cavity film comprises a polyimide, a liquid crystal polymer, a polyphthalamide or a polyethylene terephthalate.

26. The method according to claim 17, wherein the intermediate film is a tape on which the semiconductor chips are attached in one row only.

27. An optoelectronic component comprising:

an optoelectronic semiconductor chip with a top side, a bottom side opposite the top side, and a side surface connecting the top side and the bottom side; and

a housing body with an opening, the opening completely penetrating through the housing body,

wherein the optoelectronic semiconductor chip is located inside the opening,

wherein the bottom side of the optoelectronic semiconductor chip forms a part of a bottom side of the optoelectronic component,

wherein the housing body exceeds the optoelectronic semiconductor chip at its top side,

wherein the housing body completely surrounds the optoelectronic semiconductor chip in a lateral direction,

wherein the opening is bound by an inner side surface of the housing body in the lateral direction,

wherein the inner side surface of the housing body faces the side surface of the optoelectronic semiconductor chip,

wherein the housing body is made of a plastic material, and

wherein a side surface of the optoelectronic component is at least partially formed by an outer side surface of the housing body and shows traces of material removal.

28. The optoelectronic component according to claim 27, further comprising a phosphor layer for converting radiation emitted from the optoelectronic semiconductor chip, wherein a first part of the phosphor layer covers the top side of the optoelectronic semiconductor chip, wherein a second part of the phosphor layer covers the side surface of the optoelectronic semiconductor chip, wherein a third part of the phosphor layer covers the inner side surface of the housing body, and wherein a gap separates the second part and the third part of the phosphor layer from each other in the lateral direction.

29. The optoelectronic component according to claim 28, further comprising a transparent casting material filled into the opening such that the top side of the optoelectronic semiconductor chip is covered by the casting material and the gap between the second part and the third part of the phosphor layer is filled up with the casting material.

30. The optoelectronic component according to claim 28, wherein a fourth part of the phosphor layer connects the second part and the third part of the phosphor layer, and wherein the fourth part of the phosphor layer forms a part of the bottom side of the optoelectronic component.

31. The optoelectronic component according to claim 27, wherein the optoelectronic component is a surface-mountable optoelectronic component, and wherein the bottom side of the optoelectronic semiconductor chip comprises two contact elements for electrically connecting the optoelectronic semiconductor chip.

32. The optoelectronic component according to claim 27, wherein a diameter of the opening decreases in a direction towards the bottom side of the optoelectronic component.

33. An optoelectronic component comprising:

an optoelectronic semiconductor chip with a top side, a bottom side opposite the top side, and a side surface connecting the top side and the bottom side; and

a housing body with an opening, the opening completely penetrating through the housing body,

wherein the optoelectronic semiconductor chip is located inside the opening,

wherein the bottom side of the optoelectronic semiconductor chip forms a part of a bottom side of the optoelectronic component,

wherein the housing body exceeds the optoelectronic semiconductor chip at its top side,

wherein the housing body completely surrounds the optoelectronic semiconductor chip in a lateral direction,

wherein the opening is bound by an inner side surface of the housing body in the lateral direction,

wherein the inner side surface of the housing body faces the side surface of the optoelectronic semiconductor chip,

wherein the housing body is made of a plastic material,

wherein a side surface of the optoelectronic component is at least partially formed by an outer side surface of the housing body and shows traces of material removal, and

wherein the semiconductor chip is spaced apart from the housing body in all lateral directions.