LED CHIP MOUNTING METHOD AND DEVICE

• US 20200135989A1
• Filed: 04/15/2019
• Published: 04/30/2020
• Est. Priority Date: 10/31/2018
• Status: Active Grant

• Current Assignee: Stroke Precision Advanced Engineering Company Limited
• Original Assignee: Asti Global Inc.
• Inventors: LIAO, CHIEN-SHOU
• Granted Patent: US 10,910,530 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/67144 Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
• CPC Class Codes: H01L 2224/77261 Laser
• CPC Class Codes: H01L 2224/78261 Laser
• CPC Class Codes: H01L 2224/81 using a bump connector
• CPC Class Codes: H01L 23/3114 the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/52 Encapsulations
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H05B 45/00 Circuit arrangements for operating light-emitting diodes [LED]

Abstract

An LED mounted method includes: providing a circuit substrate having a plurality of conductive pads; through a pick and place module, disposing a plurality of conductors on the conductive pads; disposing a plurality of LED chips on the circuit substrate, with each LED chip being disposed on at least two conductors; projecting a laser source generated by a laser generation module to each LED chip so that the laser source passes through the LED chip and is projected onto at least two conductors; and curing the conductor disposed between the LED chip and the circuit substrate by irradiation of the laser source so that the LED chip is mounted on the circuit substrate.

Claims

1. An LED chip mounting method, comprising:

providing a circuit substrate including a plurality of conductive pads;

disposing a plurality of LED chips on the circuit substrate through a pick and place module, each of the LED chips being disposed on at least two conductors;

projecting a laser source generated by a laser generation module to each of the LED chips so that the laser source passes through the LED chip and is projected onto at least two of the conductors; and

curing the conductor disposed between the LED chip and the circuit substrate by irradiation of the laser source, so that the LED chip is mounted on the circuit substrate.

2. The LED chip mounting method according to claim 1, wherein each of the LED chips includes an n-type conductive layer, a light-emitting layer through which the laser source passes, and a p-type conductive layer that are disposed in a stacked arrangement, wherein the n-type conductive layer is an n-type nitrogen gallium material layer or an n-type gallium arsenide material layer, the light-emitting layer is multi-quantum well structure layer, and the p-type conductive layer is a p-type gallium nitride material layer or a p-type gallium arsenide material layer.

3. The LED chip mounting method according to claim 1, wherein each of the LED chips includes a base layer, an n-type conductive layer, a light-emitting layer through which the laser source passes, and a p-type conductive layer that are disposed in a stacked arrangement, wherein the base layer is a sapphire base layer, the n-type conductive layer is an n-type gallium nitride material layer or an n-type gallium arsenide material layer, the light-emitting layer is a multi-quantum well structure layer, and the p-type conductive layer is a p-type gallium nitride material layer or a p-type gallium arsenide material layer.

4. The LED chip mounting method according to claim 1, wherein after the step of providing the circuit substrate, the method further comprises:

disposing a plurality of the conductors on the conductive pads, or placing at least two of the conductors in each of the LED chips;

wherein, the irradiation area of the laser source covers only one conductor or one LED chip;

wherein the laser source does not pass through the circuit substrate but only passes through the LED chip;

wherein, when each of the LED chips is disposed on the circuit substrate through the pick and place module, the laser source generated by the laser generation module is directed to the LED chip through a gas guiding channel of the pick and place module.

5. An LED chip mounting device, comprising:

a carrier module for carrying a circuit substrate including a plurality of conductive pads, and a plurality of conductors being respectively disposed on the conductive pads;

a pick and place module for disposing a plurality of LED chips on the circuit substrate, and each of the LED chips being disposed on at least two of the conductors; and

a laser generation module, and that the laser source generated by the laser generation module is directed to each of the LED chips so that the laser source passes through the LED chip and is projected onto at least two of the conductors;

wherein the carrier module, the pick and place module, and the laser generation module are adjacent to each other and disposed on the same production line;

wherein the conductor disposed between the LED chip and the circuit substrate is cured by irradiation of the laser source so that the LED chip is mounted on the circuit substrate.

6. The LED chip mounting device according to claim 5, wherein each of the LED chips includes an n-type conductive layer, a light-emitting layer through which the laser source passes, and a p-type conductive layer that are in a stacked arrangement, wherein the n-type conductive layer is an n-type nitrogen gallium material layer or an n-type gallium arsenide material layer, the light-emitting layer is multi-quantum well structure layer, and the p-type conductive layer is a p-type gallium nitride material layer or a p-type gallium arsenide material layer;

wherein the pick and place module has a gas guiding channel, and the laser source generated by the laser generation module passes through the gas guiding channel.

7. The LED chip mounting device according to claim 5, wherein each of the LED chips includes a base layer disposed in a stack, an n-type conductive layer, a light-emitting layer through which the laser source passes, and a p-type conductive layer, wherein the base layer is a sapphire base layer, the n-type conductive layer is an n-type gallium nitride material layer or an n-type gallium arsenide material layer, the light-emitting layer is a multi-quantum well structure layer, and the p-type conductive layer is a p-type gallium nitride material layer or a p-type gallium arsenide material layer;

wherein the pick and place module has a gas guiding channel, and the laser source generated by the laser generation module passes through the gas guiding channel.

8. An LED mounted device, comprising a carrier module, a pick and place module, and a laser generation module, wherein the carrier module, the pick and place module, and the laser generation module are disposed on a same production line, and a laser source generated by the laser generation module is directed to an LED chip so that the laser source passes through the LED chip and is projected onto at least two conductors, and the conductor is cured by irradiation of the laser source, so that the LED chip is mounted on a circuit substrate.

9. The LED mounted device according to claim 8, wherein each of the LED chips includes an n-type conductive layer, a light-emitting layer through which the laser source passes, and a p-type conductive layer that are in a stacked arrangement, wherein the n-type conductive layer is an n-type nitrogen gallium material layer or an n-type gallium arsenide material layer, the light-emitting layer is multi-quantum well structure layer, and the p-type conductive layer is a p-type gallium nitride material layer or a p-type gallium arsenide material layer;

wherein the pick and place module has a gas guiding channel, and the laser source generated by the laser generation module passes through the gas guiding channel.

10. The LED mounted device according to claim 8, wherein each of the LED chips includes a base layer, an n-type conductive layer, a light-emitting layer through which the laser source passes, and a p-type conductive layer that are in a stacked arrangement, wherein the base layer is a sapphire base layer, the n-type conductive layer is an n-type gallium nitride material layer or an n-type gallium arsenide material layer, the light-emitting layer is a multi-quantum well structure layer, and the p-type conductive layer is a p-type gallium nitride material layer or a p-type gallium arsenide material layer;

wherein the pick and place module has a gas guiding channel, and the laser source generated by the laser generation module passes through the gas guiding channel.