Optoelectronic Semiconductor Component and Production Method

• US 20200135994A1
• Filed: 03/20/2018
• Published: 04/30/2020
• Est. Priority Date: 03/27/2017
• Status: Active Application

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Perzlmaier, Korbinian, Rafael, Christine, Tangring, Ivar
• Application Number:
  US16/493,415
• Publication Number:
  US 20200135994A1
• Time in Patent Office: Days
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An optoelectronic semiconductor component and a production method are disclosed. In an embodiment an optoelectronic semiconductor component includes a light-emitting diode chip including a semiconductor layer sequence configured to generate radiation, electrical contact points on a mounting side, a carrier body and an anti-wetting layer being exposed laterally at the light-emitting diode chip and being located between the semiconductor layer sequence and the carrier body and/or being located in a lateral direction next to the semiconductor layer sequence, a filling permeable to the radiation and a reflector for the radiation, wherein the anti-wetting layer has a repellent effect on at least one of a material of the reflector or of the filling, and wherein the filling and the reflector adjoin each other at the exposed anti-wetting layer.

Claims

1-15. -15. (canceled)

16. An optoelectronic semiconductor component comprising:

a light-emitting diode chip configured to generate radiation, the light-emitting diode chip comprising;

a semiconductor layer sequence configured to generate the radiation;

electrical contact points on a mounting side;

a carrier body; and

an anti-wetting layer being exposed laterally at the light-emitting diode chip and being located between the semiconductor layer sequence and the carrier body and/or being located in a lateral direction next to the semiconductor layer sequence;

a filling permeable to the radiation; and

a reflector for the radiation,

wherein the anti-wetting layer has a repellent effect on at least one of a material of the reflector or of the filling,

wherein the filling and the reflector adjoin each other at the exposed anti-wetting layer, and

wherein the filling widens along a direction away from the mounting side so that an interface between the filling and the reflector is configured to reflect the radiation in a direction away from the carrier body.

17. The optoelectronic semiconductor component according to claim 16, further comprising:

a luminous substance body on a chip top side facing away from the mounting side of the light-emitting diode chip,

wherein side surfaces of the luminous substance body are directly covered by the filling and the luminous substance body is spaced apart from the reflector.

18. The optoelectronic semiconductor component according to claim 17,

wherein the luminous substance body terminates flush with the filling in the direction away from the mounting side, and

wherein a top face of the luminous substance body is free of the filling and free of the reflector.

19. The optoelectronic semiconductor component according to claim 16, wherein the anti-wetting layer is electrically separated from the contact points.

20. The optoelectronic semiconductor component according to claim 16, wherein the anti-wetting layer comprises one or more metal layers and has a total thickness of between 20 nm and 500 nm inclusive.

21. The optoelectronic semiconductor component according to claim 20, wherein the anti-wetting layer comprises one or more of the following metals:

Au, Cu, Ni, Sn, or Pd.

22. The optoelectronic semiconductor component according to claim 16,

wherein the anti-wetting layer is part of a mirror for the radiation, and

wherein the anti-wetting layer is spaced apart from the semiconductor layer sequence.

23. The optoelectronic semiconductor component according to claim 16,

wherein the reflector is formed by a potting body composed of a matrix material permeable to the radiation and of light-scattering particles, and

wherein the reflector has a diffusely reflecting effect and is flush with the contact points at the mounting side.

24. The optoelectronic semiconductor component according to claim 23, wherein the filling essentially consists of a phenyl silicone and the matrix material comprises a methyl silicone so that the filling has a higher refractive index for the radiation than the matrix material.

25. The optoelectronic semiconductor component according to claim 16,

wherein the reflector is formed by a reflecting mirror layer which completely covers the filling at the interface, and

wherein the mirror layer is specularly reflective and has a thickness of at most 2 μ

m.

26. The optoelectronic semiconductor component according to claim 16,

wherein chip side surfaces of the light emitting diode chip are formed by a cast body at least on the mounting side, and

wherein the filling is spaced apart from the cast body and, in a region of the cast body, the chip side surfaces are covered directly and completely with the reflector.

27. The optoelectronic semiconductor component according to claim 16, wherein, on a side facing away from the mounting side, the filling is completely and the reflector is at least partially covered by a light decoupling body.

28. The optoelectronic semiconductor component according to claim 16,

wherein an average angle of the interface to a main radiation direction of the light-emitting diode chip lies between 40°

and 70°

inclusive, and

wherein each partial section of the interface has an angle with respect to the main radiation direction between 25° and

80°

inclusive, seen in cross section.

29. The optoelectronic semiconductor component according to claim 16,

wherein, in a direction perpendicular to the mounting side, the filling has an extent between 2 μ

m and 50 μ

m inclusive and between 2% and 40% inclusive of a total thickness of the light-emitting diode chip, and

wherein an extent of the filling along the lateral direction is between 2 μ

m and 100 μ

m inclusive and between 0.5% and 25% of a total width of the light-emitting diode chip.

30. A method comprising:

providing a light-emitting diode chip for generating radiation, the light-emitting diode chip having a semiconductor layer sequence for generating the radiation, electrical contact points arranged on a mounting side, a carrier body and an anti-wetting layer;

forming a filling which is permeable to the radiation; and

forming a reflector for the radiation,

wherein the anti-wetting layer has a repellent effect for a material of the reflector or of the filling,

wherein the anti-wetting layer is exposed laterally at the light-emitting diode chip and is located between the semiconductor layer sequence and the carrier body and/or is located in a lateral direction next to the semiconductor layer sequence so that the anti-wetting layer is a boundary line for a material of the filling or of the reflector, and

wherein forming the filling and the reflector comprises forming the filling and the reflector directly abutting one another so that the filling widens along a direction away from the mounting side and so that the radiation is reflectable in a direction away from the carrier body.