LED MOUNTING METHOD AND DEVICE

• US 20200135996A1
• Filed: 05/10/2019
• Published: 04/30/2020
• Est. Priority Date: 10/31/2018
• Status: Abandoned Application

• Current Assignee: Asti Global Inc.
• Original Assignee: Asti Global Inc.
• Inventors: LIAO, CHIEN-SHOU
• Application Number:
  US16/409,725
• Publication Number:
  US 20200135996A1
• Time in Patent Office: Days
• CPC Class Codes: B65G 47/91 incorporating pneumatic, e.g. suction, grippers
• CPC Class Codes: H01L 21/67132 Apparatus for placing on an insulating substrate, e.g. tape
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/16157 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/75263 in the upper part of the bonding apparatus, e.g. in the bonding head
• CPC Class Codes: H01L 2224/75745 in the upper part of the bonding apparatus, e.g. in the bonding head
• CPC Class Codes: H01L 2224/81005 being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/81192 wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81224 using a laser
• CPC Class Codes: H01L 2224/81815 Reflow soldering
• CPC Class Codes: H01L 24/16 of an individual bump connector
• CPC Class Codes: H01L 24/75 Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/799 Apparatus for disconnecting
• CPC Class Codes: H01L 24/81 using a bump connector
• CPC Class Codes: H01L 24/98 Methods for disconnecting semiconductor or solid-state bodies
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/30 : containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A mounting method and a mounting device for an LED chip are provided. The mounting method includes: providing a circuit substrate; disposing a plurality of conductors on the conductive solder pads; disposing the plurality of LED chips on the circuit substrate; and directing a laser source generated by a laser source generation module to each LED chip, so that the laser source passes through the LED chip and is projected on at least two conductors. The conductor disposed between the LED chip and the circuit substrate is cured by irradiation of the laser source so that the LED chip is mounted on the circuit substrate. Thereby, the conductor can be cured by the irradiation of the laser source passing through the LED chip, so that the LED chip is mounted on the circuit substrate.

Claims

1. An LED mounting method, comprising:

providing a circuit substrate including a plurality of conductive solder pads;

disposing a plurality of LED chips on the circuit substrate, each of the LED chips being disposed on at least two conductors;

directing a laser source generated by a laser source generation module to each of the LED chips such that the laser source passes through the LED chip and is projected on at least two of the conductors; and

curing the conductor disposed between the LED chip and the circuit substrate by the laser source such that the LED chip is mounted on the circuit substrate.

2. The LED mounting method according to claim 1, wherein each of the LED chips includes an n-type conductive layer, a light-emitting layer through which the laser source passes, and a p-type conductive layer that are disposed in a stacked arrangement;

the n-type conductive layer is an n-type gallium nitride material layer or an n-type gallium arsenide material layer, the light-emitting layer is a multi-quantum well structure layer, and the p-type conductive layer is a p-type gallium nitride material layer or a p-type gallium arsenide material layer;

wherein the irradiation area of the laser source only covers one conductor or one LED chip, and the intensity of the laser source generated by the laser source generation module can be adjusted;

wherein the laser source does not pass through the circuit substrate, but only passes through the LED chip.

3. The LED mounting method according to claim 1, wherein each of the LED chips includes a base layer, an n-type conductive layer, a light-emitting layer through which the laser source passes, and a p-type conductive layer that are disposed in a stacked arrangement;

the base layer is a sapphire base layer, the n-type conductive layer is an n-type gallium nitride material layer or an n-type gallium arsenide material layer, the light-emitting layer is a multi-quantum well structure layer, and the p-type conductive layer is a p-type gallium nitride material layer or a p-type gallium arsenide material layer;

wherein the irradiation area of the laser source covers only one conductor or one of the LED chips, and the intensity of the laser source generated by the laser source generation module can be adjusted;

wherein the laser source does not pass through the circuit substrate, but only passes through the LED chip.

4. The LED mounting method according to claim 1, wherein after the step of providing the circuit substrate, the method further includes:

disposing a plurality of the conductors on the conductive solder pads, or placing at least two conductors on each of the LED chips;

wherein, after the step of mounting the LED chip on the circuit substrate, the method further includes;

directing the laser source generated by the laser source generation module to the contact interface of the LED chip and the conductor, such that a connection strength between the LED chip and the conductor is reduced, so that the LED chip is easily removed from the circuit substrate.

5. An LED mounting device, comprising:

a carrier module for carrying a circuit substrate, the circuit substrate including a plurality of conductive solder pads, and a plurality of conductors being respectively disposed on the conductive solder pads;

a pick and place module for disposing a plurality of LED chips on the circuit substrate, each of the LED chips being disposed on at least two of the conductors; and

a laser source generation module, the generated laser source being directed to each of the LED chips, such that the laser source passes through the LED chip and is projected on at least two of the conductors;

wherein the conductor disposed between the LED chip and the circuit substrate is cured by irradiation of the laser source, so that the LED chip is mounted on the circuit substrate.

6. The LED mounting device according to claim 5, wherein each of the LED chips includes an n-type conductive layer, a light-emitting layer through which the light source passes, and a p-type conductive layer that are disposed in a stacked arrangement;

the n-type conductive layer is an n-type gallium nitride material layer or an n-type gallium arsenide material layer, the light-emitting layer is a multi-quantum well structure layer, and the p-type conductive layer is a p-type gallium nitride material layer or a p-type gallium arsenide material layer;

wherein the irradiation area of the laser source only covers one conductor or one LED chip, and the intensity of the laser source generated by the laser source generation module can be adjusted;

wherein the laser source does not pass through the circuit substrate, but only passes through the LED chip.

7. The LED mounting device according to claim 5, wherein each of the LED chips includes a base layer, an n-type conductive layer, a light-emitting layer through which the laser source passes, and a p-type conductive layer that are disposed in a stacked arrangement;

the base layer is a sapphire base layer, the n-type conductive layer is an n-type gallium nitride material layer or an n-type gallium arsenide material layer, the light-emitting layer is a multi-quantum well structure layer, and the p-type conductive layer is a p-type gallium nitride material layer or a p-type gallium arsenide material layer;

wherein the irradiation area of the laser source covers only one conductor or one of the LED chips, and the intensity of the laser source generated by the laser source generation module can be adjusted;

wherein the laser source does not pass through the circuit substrate, but only passes through the LED chip.

8. An LED mounting device, comprising a carrier module, a pick and place module, and a laser source generation module;

wherein a laser source generated by the laser source generation module is directed to an LED chip, so that the laser source passes through the LED chip and is projected on at least two conductors, and the conductor is cured by irradiation of the laser source such that the LED chip is mounted on a circuit substrate.

9. The LED mounting device according to claim 8, wherein each of the LED chips includes an n-type conductive layer, a light-emitting layer through which the light source passes, and a p-type conductive layer that are disposed in a stacked arrangement;

the n-type conductive layer is an n-type gallium nitride material layer or an n-type gallium arsenide material layer, the light-emitting layer is a multi-quantum well structure layer, and the p-type conductive layer is a p-type gallium nitride material layer or a p-type gallium arsenide material layer;

wherein the irradiation area of the laser source only covers one conductor or one LED chip, and the intensity of the laser source generated by the laser source generation module can be adjusted;

wherein the laser source does not pass through the circuit substrate, but only passes through the LED chip.

10. The LED mounting device according to claim 8, wherein each of the LED chips includes a base layer, an n-type conductive layer, a light-emitting layer through which the light source passes, and a p-type conductive layer that are disposed in a stacked arrangement;

the base layer is a sapphire base layer, the n-type conductive layer is an n-type gallium nitride material layer or an n-type gallium arsenide material layer, the light-emitting layer is a multi-quantum well structure layer, and the p-type conductive layer is a p-type gallium nitride material layer or a p-type gallium arsenide material layer;

wherein the irradiation area of the laser source covers only one conductor or one of the LED chips, and the intensity of the laser source generated by the laser source generation module can be adjusted;

wherein the laser source does not pass through the circuit substrate, but only passes through the LED chip.