Thermoelectric Materials and Devices

• US 20200136003A1
• Filed: 12/02/2019
• Published: 04/30/2020
• Est. Priority Date: 06/04/2018
• Status: Abandoned Application

• Current Assignee: Florida State University Research Foundation, Inc. (State University System of Florida)
• Original Assignee: Florida State University Research Foundation, Inc. (State University System of Florida)
• Inventors: Wei, Kaya, Siegrist, Theo, Baumbach, Ryan
• Application Number:
  US16/700,050
• Publication Number:
  US 20200136003A1
• Time in Patent Office: Days
• CPC Class Codes: C22C 12/00 Alloys based on antimony or bismuth
• CPC Class Codes: C30B 15/00 Single-crystal growth by pulling from a melt, e.g. Czochralski method under a protective fluid C30B27/00
• CPC Class Codes: C30B 29/52 Alloys
• CPC Class Codes: H10N 10/01 Manufacture or treatment
• CPC Class Codes: H10N 10/81 Structural details of the junction
• CPC Class Codes: H10N 10/853 comprising arsenic, antimony or bismuth H10N10/852 takes precedence
• CPC Class Codes: H10N 10/854 comprising only metals H10N10/852, H10N10/853 take precedence

Abstract

1-2-20 semiconductor compounds have advantageous thermoelectric properties. An exemplary apparatus includes a thermoelectric device including a first thermoelectric material having the formula R_xT_yM_z where R is at least one rare earth metal, Ba, or Bi and 0≤x≤1; T is at least one transition metal and 0<y≤2; and M is at least one member of the group Al, Zn, Ga, Cd, and In and 0<z≤20.

Claims

1. An apparatus comprising a thermoelectric device including a first thermoelectric material having the formula R_xT_yM_z where R is at least one rare earth metal, Ba, or Bi and 0≤

x≤

1;

T is at least one transition metal and 0<

y≤

2; and

M is at least one member of the group Al, Zn, Ga, Cd, and In and 0<

z≤

20.

2. The apparatus of claim 1, wherein the device is selected from a thermoelectric refrigerator, a thermoelectric heater, and a thermoelectric electrical generator.

3. The apparatus of claim 1, wherein the first thermoelectric material is an n-type semiconductor and the device further includes a second thermoelectric material that is a p-type semiconductor.

4. The apparatus of claim 1, wherein R is selected from Bi, Ba, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Th, U, Np, and Pu.

5. The apparatus of claim 1, wherein R is Yb and Ce.

6. The apparatus of claim 1, wherein T is at least one member of the group Ag, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Mo, Ru, Rh, Pd, W, Os, Ir, and Pt.

7. The apparatus of claim 1, wherein T includes at least one member of the group Co, Rh, and Ir.

8. The apparatus of claim 1, wherein M includes Zn.

9. The apparatus of claim 1, wherein:

R is Yb and Ce;

T includes at least one of Co, Rh, and Ir; and

M includes Zn.

10. The apparatus of claim 1, wherein the first thermoelectric material is selected from Yb_0.75Ce_0.25Co₂Zn₂₀, Yb_0.75Ce_0.25Rh₂Zn₂₀, and Yb_0.75Ce_0.25Ir₂Zn₂₀.

11. The apparatus of claim 1, wherein the first thermoelectric material is in electrical contact with electronic circuitry.

12. A method of making a thermoelectric device, the method comprising connecting electronic circuitry to a thermoelectric device including a first thermoelectric material having the formula R_xT_yM_z where R is at least one rare earth metal, Ba, or Bi and 0≤

x≤

1;

T is at least one transition metal and 0<

y≤

2; and

M is at least one member of the group Al, Zn, Ga, Cd, and In and 0<

z≤

20.

13. The method of claim 12, wherein the device is selected from a thermoelectric refrigerator, a thermoelectric heater, and a thermoelectric electrical generator.

14. The method of claim 12, wherein the first thermoelectric material is an n-type semiconductor and the device further includes a second thermoelectric material that is a p-type semiconductor.

15. The method of claim 12, wherein R is selected from Bi, Ba, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Th, U, Np, and Pu.

16. The method of claim 12, wherein R is Yb and Ce.

17. The method of claim 12, wherein T is at least one member of the group Ag, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Mo, Ru, Rh, Pd, W, Os, Ir, and Pt.

18. The method of claim 12, wherein T includes at least one member of the group Co, Rh, and Ir.

19. The method of claim 12, wherein M includes Zn.

20. The method of claim 12, wherein:

R includes Yb and Ce;

T includes at least one of Co, Rh, and Ir; and

M includes Zn.

21. The method of claim 12, wherein the first thermoelectric material is selected from Yb_0.75Ce_0.25Co₂Zn₂₀, Yb_0.75Ce_0.25Rh₂Zn₂₀, Yb_0.75Ce_0.25Ir₂Zn₂₀.