SPIN-ORBIT-TORQUE TYPE MAGNETIZATION ROTATING ELEMENT, SPIN-ORBIT-TORQUE TYPE MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY

• US 20200136017A1
• Filed: 02/06/2019
• Published: 04/30/2020
• Est. Priority Date: 02/28/2018
• Status: Active Grant

• Current Assignee: TDK Corporation
• Original Assignee: TDK Corporation
• Inventors: ASHIDA, Takuya, SHIOKAWA, Yohei, SASAKI, Tomoyuki
• Granted Patent: US 11,211,547 B2
• Time in Patent Office: Days
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/18 using Hall-effect devices
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3286 Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
• CPC Class Codes: H01F 10/329 Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
• CPC Class Codes: H01F 41/32 for applying conductive, insulating or magnetic material on a magnetic film , specially adapted for a thin magnetic film
• CPC Class Codes: H01L 29/82 controllable by variation of the magnetic field applied to the device
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A spin-orbit-torque type magnetization rotating element includes: a spin-orbit torque wiring extending in a first direction; and a first ferromagnetic layer laminated on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a metal oxide whose electrical conductivity properties exhibit a metallic behavior with respect to temperature, and an oxygen concentration in a region on the first ferromagnetic layer side and an oxygen concentration in a region opposite to the first ferromagnetic layer are asymmetrical with respect to a center of the spin-orbit torque wiring in a thickness direction thereof.

Claims

1. A spin-orbit-torque type magnetization rotating element, comprising:

a spin-orbit torque wiring extending in a first direction; and

a first ferromagnetic layer laminated on the spin-orbit torque wiring,

wherein the spin-orbit torque wiring includes a metal oxide whose electrical conductivity properties exhibit a metallic behavior with respect to temperature, and

an oxygen concentration in a region a first ferromagnetic layer side and an oxygen concentration in a region opposite to the first ferromagnetic layer are asymmetrical with respect to a center of the spin-orbit torque wiring in a thickness direction thereof.

2. The spin-orbit-torque type magnetization rotating element according to claim 1, wherein the spin-orbit torque wiring may include a portion where an oxygen concentration monotonously increase or monotonically decrease in the thickness direction of the spin-orbit torque wiring.

3. The spin-orbit-torque type magnetization rotating element according to claim 1, wherein the spin-orbit torque wiring contains an oxide of one or more elements selected from the group consisting of Cr, Fe, Ir, W, Mo, Re, Ti, V, Nb, Pd, Ru, and Sn.

4. The spin-orbit-torque type magnetization rotating element according to claim 3, wherein the spin-orbit torque wiring contains an oxide of one or more elements selected from the group consisting of Ir, W, Pd, Mo, Nb, and Re.

5. The spin-orbit-torque type magnetization rotating element according to claim 1, wherein the spin-orbit torque wiring has a metal insertion layer at any position in the thickness direction thereof.

6. The spin-orbit-torque type magnetization rotating element according to claim 5, wherein the spin-orbit torque wiring has the metal insertion layer at a position farther from the first ferromagnetic layer than the center of the spin-orbit torque wiring in the thickness direction thereof.

7. The spin-orbit-torque type magnetization rotating element according to claim 5, wherein a metal element constituting the metal insertion layer is different from a metal element constituting the metal oxide of the spin-orbit torque wiring.

8. The spin-orbit-torque type magnetization rotating element according to claim 5, wherein a thickness of the metal insertion layer is less than twice ion radii of metal atoms constituting the metal insertion layer.

9. The spin-orbit-torque type magnetization rotating element according to claim 1, wherein, in a view of the thickness direction, an oxygen concentration at a first point overlapping the first ferromagnetic layer of the spin-orbit torque wiring is lower than an oxygen concentration at a second point not overlapping the first ferromagnetic layer.

10. A spin-orbit-torque type magnetoresistance effect element, comprising:

the spin-orbit-torque type magnetization rotating element according to claim 1;

a second ferromagnetic layer facing the first ferromagnetic layer; and

a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer.

11. A magnetic memory, comprising:

a plurality of the spin-orbit-torque type magnetoresistance effect elements according to claim 10.

12. The spin-orbit-torque type magnetization rotating element according to claim 2, wherein the spin-orbit torque wiring contains an oxide of one or more elements selected from the group consisting of Cr, Fe, Ir, W, Mo, Re, Ti, V, Nb, Pd, Ru, and Sn.

13. The spin-orbit-torque type magnetization rotating element according to claim 12, wherein the spin-orbit torque wiring contains an oxide of one or more elements selected from the group consisting of Ir, W, Pd, Mo, Nb, and Re.

14. The spin-orbit-torque type magnetization rotating element according to claim 2, wherein the spin-orbit torque wiring has a metal insertion layer at any position in the thickness direction thereof.

15. The spin-orbit-torque type magnetization rotating element according to claim 14, wherein the spin-orbit torque wiring has the metal insertion layer at a position farther from the first ferromagnetic layer than the center of the spin-orbit torque wiring in the thickness direction thereof.

16. The spin-orbit-torque type magnetization rotating element according to claim 14, wherein a metal element constituting the metal insertion layer is different from a metal element constituting the metal oxide of the spin-orbit torque wiring.

17. The spin-orbit-torque type magnetization rotating element according to claim 14, wherein a thickness of the metal insertion layer is less than twice ion radii of metal atoms constituting the metal insertion layer.

18. The spin-orbit-torque type magnetization rotating element according to claim 2, wherein, in a view of the thickness direction, an oxygen concentration at a first point overlapping the first ferromagnetic layer of the spin-orbit torque wiring is lower than an oxygen concentration at a second point not overlapping the first ferromagnetic layer.

19. A spin-orbit-torque type magnetoresistance effect element, comprising:

the spin-orbit-torque type magnetization rotating element according to claim 2;

a second ferromagnetic layer facing the first ferromagnetic layer; and

a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer.

20. A magnetic memory, comprising:

a plurality of the spin-orbit-torque type magnetoresistance effect elements according to claim 19.