MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
First Claim
1. A magnetic memory, comprising:
- a first spin-orbital-transfer-spin-torque-transfer (SOT-STT) hybrid magnetic device disposed over a substrate; and
a second SOT-STT hybrid magnetic device disposed over the substrate; and
a SOT conductive layer connected to the first and second SOT-STT devices, wherein;
each of the first and second SOT-STT hybrid magnetic devices comprises;
a first magnetic layer, as a magnetic free layer;
a spacer layer disposed under the first magnetic layer; and
a second magnetic layer, as a magnetic reference layer, disposed under the spacer layer,the SOT conductive layer is disposed over the first magnetic layer of each of the first and second SOT-STT hybrid magnetic devices.
1 Assignment
0 Petitions
Accused Products
Abstract
A magnetic memory including a first spin-orbital-transfer-spin-torque-transfer (SOT-STT) hybrid magnetic device disposed over a substrate, a second SOT-STT hybrid magnetic device disposed over the substrate, and a SOT conductive layer connected to the first and second SOT devices. Each of the first and second SOT-STT hybrid magnetic devices includes a first magnetic layer, as a magnetic free layer, a spacer layer disposed under the first magnetic layer, and a second magnetic layer, as a magnetic reference layer, disposed under the spacer layer. The SOT conductive layer is disposed over the first magnetic layer of each of the first and second SOT-STT hybrid magnetic devices.
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Citations
20 Claims
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1. A magnetic memory, comprising:
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a first spin-orbital-transfer-spin-torque-transfer (SOT-STT) hybrid magnetic device disposed over a substrate; and a second SOT-STT hybrid magnetic device disposed over the substrate; and a SOT conductive layer connected to the first and second SOT-STT devices, wherein; each of the first and second SOT-STT hybrid magnetic devices comprises; a first magnetic layer, as a magnetic free layer; a spacer layer disposed under the first magnetic layer; and a second magnetic layer, as a magnetic reference layer, disposed under the spacer layer, the SOT conductive layer is disposed over the first magnetic layer of each of the first and second SOT-STT hybrid magnetic devices. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A magnetic memory, comprising:
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first word lines; a second word line; a bit line; a source line; memory cells; and a conductive wire, wherein; each of the memory cells includes a magnetic-tunneling-junction (MTJ) film stack and a spin-torque-transfer (STT) switching device, one terminal of the STT switching device is coupled to one end of the MTJ film stack, another terminal of the STT switching device is coupled to the source line and a control terminal of the STT switching device is coupled to corresponding one of the first word lines, another end of the MTJ film stack is coupled to the conductive wire, the conductive wire is coupled to the bit line, the magnetic memory further comprises a SOT switching device, and one terminal of the SOT switching device is coupled to the conductive wire, another terminal of the SOT switching device is coupled to the source line and a control terminal of the SOT switching device is coupled to the second word line. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A method of manufacturing a magnetic memory, comprising:
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forming a plurality of magnetic-tunneling-junction (MTJ) film stacks, each including; a first magnetic layer, as a magnetic free layer; a spacer layer disposed under the first magnetic layer; and a second magnetic layer, as a magnetic reference layer, disposed under the spacer layer; forming an interlayer dielectric layer to isolate the plurality of MTJ film stacks from each other; and forming a conductive wire over the plurality of MTJ film stacks to be coupled to the plurality of cell stacks, wherein the conductive wire includes a narrow portion having a width narrower than a remaining portion or a thin portion having a thickness smaller than the remaining portion over each of the plurality of MTJ film stacks, the remaining portion being disposed between adjacent MTJ film stacks.
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Specification