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BAR-TYPE MAGNETORESISTIVE RANDOM ACCESS MEMORY CELL

  • US 20200136019A1
  • Filed: 10/03/2019
  • Published: 04/30/2020
  • Est. Priority Date: 10/31/2018
  • Status: Active Application
First Claim
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1. An integrated circuit, comprising:

  • a magnetoresistive random access memory cell comprising;

    a bar-type magnetic tunnel junction, havinga reference layer including a first magnetizable material,a free layer including a second magnetizable material, anda barrier layer between the reference layer and the free layer;

    an antiferromagnetic layer over the free layer; and

    a spacer contacting a sidewall of the reference layer and a sidewall of the antiferromagnetic layer.

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