Under-Cut Via Electrode for Sub 60nm Etchless MRAM Devices by Decoupling the Via Etch Process

• US 20200136021A1
• Filed: 12/27/2019
• Published: 04/30/2020
• Est. Priority Date: 06/14/2018
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Yang, Yi, Shen, Dongna, Wang, Yu-Jen
• Granted Patent: US 11,024,797 B2
• Time in Patent Office: Days
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: H01F 41/308 lift-off processes, e.g. ion milling, for trimming or patterning
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A method for fabricating a magnetic tunneling junction (MTJ) structure is described. A first dielectric layer is deposited on a bottom electrode and partially etched through to form a first via opening having straight sidewalls, then etched all the way through to the bottom electrode to form a second via opening having tapered sidewalls. A metal layer is deposited in the second via opening and planarized to the level of the first dielectric layer. The remaining first dielectric layer is removed leaving an electrode plug on the bottom electrode. MTJ stacks are deposited on the electrode plug and on the bottom electrode wherein the MTJ stacks are discontinuous. A second dielectric layer is deposited over the MTJ stacks and polished to expose a top surface of the MTJ stack on the electrode plug. A top electrode layer is deposited to complete the MTJ structure.

Claims

1. A device comprising:

a bottom electrode having a top surface;

a tapered conductive via disposed over the bottom electrode, the tapered conductive via having a first tapered sidewall and an opposing second tapered sidewall and a top surface extending from the first tapered sidewall to the second tapered sidewall;

a stack of magnetic tunneling junction (MTJ) layers that includes a first portion disposed directly on the top surface of the conductive via and a second portion disposed directly on the top surface of the bottom electrode, wherein the first portion of the stack of the MTJ layers is discontinuous with respect to the second portion of the stack of the MTJ layers; and

a top electrode disposed directly over the first portion of the stack of the MTJ layers and directly over the second portion of the stack of the MTJ layers.

2. The device of claim 1, wherein the tapered conductive via physically contacts the top surface of the bottom electrode.

3. The device of claim 1, wherein the first portion of the stack of the MTJ layers and the second portion of the stack of the MTJ layers include the same material layers.

4. The device of claim 1, further comprising a dielectric layer extending continuously from the top electrode to a top surface of the second portion of the MTJ layers.

5. The device of claim 4, wherein the dielectric layer extends continuously from the second portion of the MTJ layers to the tapered conductive via such that the tapered conductive via is embedded in the dielectric layer.

6. The device of claim 5, wherein the dielectric layer extends continuously from the second portion of the MTJ layers to the first portion of the MTJ layers such that the first portion of the MTJ layers are embedded in the dielectric layer.

7. The device of claim 1, wherein the conductive via further includes a bottom surface interfacing with the bottom electrode, the bottom surface having a length ranging from about 30 nm to about 40 nm, and

wherein the top surface of the conductive via has a length ranging from about 50 nm to about 60 nm.

8. A device comprising:

a bottom electrode having a top surface;

a tapered conductive via disposed directly on the top surface of the bottom electrode, the tapered conductive via having a first tapered sidewall and an opposing second tapered sidewall and a top surface extending from the first tapered sidewall to the second tapered sidewall, the conductive via including an upper portion disposed over a lower portion such that the upper portion of the conductive via is wider than the lower portion of the conductive via;

a stack of magnetic tunneling junction (MTJ) layers that includes a first portion disposed directly on the top surface of the conductive via, a second portion disposed directly on the top surface of the bottom electrode on a first side of the conductive via and a third portion disposed directly on the top surface of the bottom electrode on a second side of the conductive via that is opposite the first side, wherein the first, second and third portions of the stack of the MTJ layers are discontinuous with respect to each other; and

a top electrode disposed directly over the first, second and third portions of the stack of the MTJ layers.

9. The device of claim 8, wherein the first portion of the stack of the MTJ layers is without any chemical damage along a sidewall of the first portion of the stack of the MTJ layers.

10. The device of claim 8, wherein the first portion of the stack of the MTJ layers is without any conductive metal re-deposition on the sidewall of the first portion of the stack of the MTJ layers.

11. The device of claim 8, wherein a sidewall of the second portion of the stack of the MTJ layers faces the first tapered sidewall of the conductive via,

wherein a top surface of the second portion of the stack of the MTJ layers faces the top electrode,

wherein a sidewall of the third portion of the stack of the MTJ layers faces the second tapered sidewall of the conductive via,

wherein a top surface of the third portion of the stack of the MTJ layers faces the top electrode, and

wherein the device further includes a dielectric material physically contacting the entire first tapered sidewall, the entire sidewall of the second portion of the stack of the MTJ layers, the top surface of the second portion of the stack of the MTJ layers, the entire second tapered sidewall, the entire sidewall of the third portion of the stack of the MTJ layers and the top surface of the third portion of the stack of the MTJ layers.

12. The device of claim 11, wherein the dielectric material extends continuously from the first tapered sidewall to the sidewall of the second portion of the stack of the MTJ layers, and

wherein the dielectric material extends continuously from the second tapered sidewall to the sidewall of the third portion of the stack of the MTJ layers.

13. The device of claim 12, wherein the first portion of the stack of the MTJ layers includes opposing sidewalls, and

wherein the dielectric material physically contacts the entirety of the opposing sidewalls of the first portion of the stack of the MTJ layers.

14. The device of claim 8, wherein the second and third portions of the stack of the MTJ layers extend to a first height above the bottom electrode, and

wherein the top surface of the conductive via is position at a second height above the bottom electrode, the second height being greater than the first height.

15. The device of claim 8, wherein each of the first, second and third portions of the stack of the MTJ layers includes a seed layer, a pinned layer, a barrier layer, a free layer and a cap layer.

16. A device comprising:

a bottom electrode having a top surface;

a conductive via extending from the top surface of the bottom electrode to a first height above the bottom electrode, wherein the width of the conductive via decreases towards to the bottom electrode;

a stack of magnetic tunneling junction (MTJ) layers that includes a first portion disposed directly on the conductive via and a second portion disposed directly on the top surface of the bottom electrode, the second portion of the stack of the MTJ layers extending to a second height above the bottom electrode, the second height being less than the first height; and

a dielectric layer disposed directly on the first and second portions of the stack of the MTJ layers such that the dielectric layer isolates the first and second portions of the stack of the MTJ layers from each other.

17. The device of claim 16, further comprising a top electrode disposed directly over the first portion of the stack of the MTJ layers and directly over the second portion of the stack of the MTJ layers.

18. The device of claim 17, wherein the top electrode physically contacts the first portion of the stack of the MTJ layers, and

wherein a portion of the dielectric layer is positioned between the top electrode and the second portion of the stack of the MTJ layers thereby preventing the top electrode from physically contacting the second portion of the stack of the MTJ layers.

19. The device of claim 16, wherein the conductive via includes a metal material.

20. The device of claim 16, wherein the first portion of the stack of the MTJ layers has a first length and the second portion of the stack of the MTJ layers has a second length that is greater than the first length.