MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

• US 20200136022A1
• Filed: 05/30/2019
• Published: 04/30/2020
• Est. Priority Date: 10/31/2018
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: LIN, Shy-Jay, SONG, Mingyuan
• Granted Patent: US 11,239,413 B2
• Time in Patent Office: Days
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/85 Magnetic active materials
• CPC Class Codes: H10N 52/00 Hall-effect devices integrated devices or assemblies of multiple devices H10N59/00
• CPC Class Codes: H10N 52/01 Manufacture or treatment
• CPC Class Codes: H10N 52/80 Constructional details

Abstract

A spin-orbit-torque (SOT) magnetic device includes a bottom metal layer, a first magnetic layer, as a magnetic free layer, disposed over the bottom metal layer, a spacer layer disposed over the first magnetic layer, and a second magnetic layer disposed over the spacer layer. The first magnetic layer includes a lower magnetic layer, a middle layer made of non-magnetic layer and an upper magnetic layer.

Claims

1. A spin-orbit-torque (SOT) magnetic device, comprising:

a bottom metal layer;

a first magnetic layer, as a magnetic free layer, disposed over the bottom metal layer;

a spacer layer disposed over the first magnetic layer; and

a second magnetic layer disposed over the spacer layer,

wherein the first magnetic layer includes a lower magnetic layer, a middle layer made of non-magnetic layer and an upper magnetic layer.

2. The SOT magnetic device of claim 1, wherein the lower magnetic layer includes an alloy of iron, cobalt and boron.

3. The SOT magnetic device of claim 2, wherein:

the upper magnetic layer includes at least one of an alloy of iron, cobalt and boron and an alloy of nickel and iron.

4. The SOT magnetic device of claim 3, wherein a thickness of the lower magnetic layer is in a range from 0.6 nm to 1.2 nm.

5. The SOT magnetic device of claim 3, wherein:

the upper magnetic layer includes the alloy of iron, cobalt and boron, and

a thickness of the alloy of iron, cobalt and boron is in a range from 1.0 nm to 3.0 nm.

6. The SOT magnetic device of claim 3, wherein:

the upper magnetic layer includes the alloy of nickel and iron, and

a thickness of the alloy of nickel and iron is in a range from 0.4 nm to 3.0 nm.

7. The SOT magnetic device of claim 3, wherein the lower magnetic layer is Fe_xCo_yBi_1-x-y, where 0.50≤

x≤

0.70 and 0.10≤

y≤

0.30.

8. The SOT magnetic device of claim 1, wherein the middle non-magnetic layer includes one or more layers of W, Mo, Pt and Ru, and alloy thereof.

9. The SOT magnetic device of claim 8, wherein a thickness of the middle non-magnetic layer in a range from 0.2 nm to 0.5 nm.

10. The SOT magnetic device of claim 1, wherein the bottom metal layer is made of tungsten, molybdenum or tantalum.

11. The SOT magnetic device of claim 1, further comprising an intermediate metal layer disposed between the spacer layer and the second magnetic layer.

12. The SOT magnetic device of claim 11, wherein the intermediate metal layer is made of magnesium and the spacer layer is made of magnesium oxide.

13. The SOT magnetic device of claim 1, further comprising a top metal layer disposed over the second magnetic layer.

14. The SOT magnetic device of claim 13, wherein the top metal layer is made of ruthenium.

15. The SOT magnetic device of claim 1, wherein the second magnetic layer includes iron, cobalt and boron.

16. The SOT magnetic device of claim 1, wherein the first magnetic layer includes a first interfacial layer between the lower magnetic layer and the middle layer and a second interfacial layer between the middle non-magnetic layer and the upper magnetic layer.

17. The SOT magnetic device of claim 16, wherein at least one of the first and second interfacial layer is made of FeB.

18. The SOT magnetic device of claim 16, wherein at least one of the first and second interfacial layer has a thickness in a range from 0.5 nm to 2.0 nm.

19. A spin-orbit-torque (SOT) magnetic device, comprising:

a bottom metal layer;

a first magnetic layer, as a free magnetic layer, disposed under the bottom metal layer;

a spacer layer disposed under the first magnetic layer; and

a second magnetic layer disposed under the spacer layer,

wherein the first magnetic layer includes a lower magnetic layer, a middle layer made of non-magnetic layer and an upper magnetic layer.

20. A method of manufacturing a spin-orbit-torque (SOT) magnetic device, comprising:

forming bottom via contacts in a first interlayer dielectric layer;

forming a stacked layer including a bottom metal layer, a first magnetic layer, a spacer layer and a second magnetic layer;

patterning the stacked layer to form a line pattern; and

patterning the first magnetic layer, the spacer layer and the second magnetic layer to form a SOT film stack,

wherein the first magnetic layer includes a lower magnetic layer, a middle layer made of non-magnetic layer and an upper magnetic layer.