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MAGNETORESISTANCE STRUCTURE INCLUDING TWO HARD MASKS

  • US 20200136032A1
  • Filed: 01/02/2020
  • Published: 04/30/2020
  • Est. Priority Date: 09/05/2018
  • Status: Active Grant
First Claim
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1. A magnetoresistance structure comprising:

  • a base comprising;

    a conductive layer; and

    a first active element on and indirect contact with the conductive layer;

    a pillar structure connected to the base, the pillar structure comprising;

    a first hard mask;

    a capping material;

    a second active element; and

    a tunnel layer;

    an etching barrier deposited on the pillar and the base;

    a second hard mask deposited on the etching barrier; and

    a capping barrier deposited on the second hard mask and covering side walls of the base.

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