MAGNETORESISTANCE STRUCTURE INCLUDING TWO HARD MASKS

• US 20200136032A1
• Filed: 01/02/2020
• Published: 04/30/2020
• Est. Priority Date: 09/05/2018
• Status: Active Grant

• Current Assignee: Allegro Microsystems Incorporated (Sanken Electric Company Limited)
• Original Assignee: Allegro Microsystems Incorporated (Sanken Electric Company Limited)
• Inventors: Liu, Yen Ting, Klebanov, Maxim, Campiglio, Paolo, Chetlur, Sundar
• Granted Patent: US 11,005,036 B2
• Time in Patent Office: Days
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A magnetoresistance structure includes a base that includes a conductive layer and a first active element on and in direct contact with the conductive layer. The magnetoresistance structure also includes a pillar structure connected to the base. The pillar structure includes a first hard mask, a capping material, a second active element and a tunnel layer. The magnetoresistance structure also further includes an etching barrier deposited on the pillar and the base; a second hard mask deposited on the etching barrier; and a capping barrier deposited on the second hard mask and covering side walls of the base.

Claims

1. A magnetoresistance structure comprising:

a base comprising;

a conductive layer; and

a first active element on and indirect contact with the conductive layer;

a pillar structure connected to the base, the pillar structure comprising;

a first hard mask;

a capping material;

a second active element; and

a tunnel layer;

an etching barrier deposited on the pillar and the base;

a second hard mask deposited on the etching barrier; and

a capping barrier deposited on the second hard mask and covering side walls of the base.

2. The magnetoresistance structure of claim 1, wherein the base and the pillar structure form one of a tunneling magnetoresistance (TMR) stack or a magnetic tunnel junction (MTJ) stack.

3. The magnetoresistance structure of claim 1, wherein the capping barrier comprises silicon nitride.

4. The magnetoresistance structure of claim 1, wherein the tunnel layer comprises a layer of magnesium oxide.

5. The magnetoresistance structure of claim 1, wherein the tunnel layer comprises a layer of aluminum oxide.

6. The magnetoresistance structure of claim 1, wherein the capping material comprises a layer of silicon nitride.

7. The magnetoresistance structure of claim 1, wherein the capping material comprises a layer of silicon dioxide.

8. The magnetoresistance structure of claim 1, further comprising a substrate directly connected to the conductive layer of the base,

wherein the substrate comprises one of silicon dioxide or silicon nitride.

9. The magnetoresistance structure of claim 8, the capping barrier is in direct contact with the substrate.

10. The magnetoresistance structure of claim 1, wherein the first or second hard mask comprises silicon dioxide.

11. The magnetoresistance structure of claim 1, wherein the first or second hard mask comprises silicon nitride.

12. The magnetoresistance structure of claim 1, wherein the first active element, the second active element and the tunneling barrier are part of a tunneling magnetoresistance (TMR) element or a magnetic tunnel junction (MTJ).

13. The magnetoresistance structure of claim 1, wherein the conductive layer is titanium nitride.

14. The magnetoresistance structure of claim 1, wherein the tunnel layer is in direct contact with the first active element.

15. The magnetoresistance structure of claim 13, wherein the tunnel layer is in direct contact with the second active element.

16. The magnetoresistance structure of claim 1, wherein the capping barrier covers the side walls comprising sides of the conductive layer and sides of the first active element.

17. The magnetoresistance structure of claim 16, wherein the capping barrier covers side walls of the etching barrier.

18. The magnetoresistance structure of claim 17, wherein the capping barrier covers side walls of the second hard mask.

19. The magnetoresistance structure of claim 1, wherein the second hard mask is separated from the first active element by the etching barrier.

20. The magnetoresistance element of claim 1, wherein the first active element and the second active element each include two or more sublayers.