SCALED NANOTUBE ELECTRODE FOR LOW POWER MULTISTAGE ATOMIC SWITCH
First Claim
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1. A method of forming a memory device comprising:
- providing a via to a carbon nanotube, wherein the via to the carbon nanotubes defines a memory cell;
depositing a dielectric for cation transportation within the via on the carbon nanotube; and
forming an electrode on the dielectric for cation transportation, wherein the second electrode is composed of a metal.
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Abstract
A method of forming a memory device that includes depositing a first dielectric material within a trench of composed of a second dielectric material; positioning a nanotube within the trench using chemical recognition to the first dielectric material; depositing a dielectric for cation transportation within the trench on the nanotube; and forming a second electrode on the dielectric for cation transportation, wherein the second electrode is composed of a metal.
1 Citation
20 Claims
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1. A method of forming a memory device comprising:
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providing a via to a carbon nanotube, wherein the via to the carbon nanotubes defines a memory cell; depositing a dielectric for cation transportation within the via on the carbon nanotube; and forming an electrode on the dielectric for cation transportation, wherein the second electrode is composed of a metal. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of forming a memory device comprising:
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positioning a nanotube using chemical recognition to a dielectric material; depositing a dielectric for cation transportation on the nanotube; and forming an electrode on the dielectric for cation transportation, wherein the electrode is composed of a metal. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification