Organic Semiconductor Composition, Organic Thin Film, and Organic Thin Film Transistor

• US 20200136061A1
• Filed: 03/19/2018
• Published: 04/30/2020
• Est. Priority Date: 03/21/2017
• Status: Active Grant

• Current Assignee: Nippon Kayaku Company Limited
• Original Assignee: Nippon Kayaku Company Limited
• Inventors: Onodera, Nozomi, Inoue, Satoru, Sadamitsu, Yuichi
• Granted Patent: US 11,495,744 B2
• Time in Patent Office: Days
• CPC Class Codes: H10K 10/46 Field-effect transistors, e.g. organic thin-film transistors [OTFT] H10K10/43 takes precedence
• CPC Class Codes: H10K 10/464 Lateral top-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/471 the gate dielectric comprising only organic materials
• CPC Class Codes: H10K 10/488 the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
• CPC Class Codes: H10K 71/13 using printing techniques, e.g. ink-jet printing or screen printing
• CPC Class Codes: H10K 71/15 characterised by the solvent used
• CPC Class Codes: H10K 85/111 comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
• CPC Class Codes: H10K 85/141 comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
• CPC Class Codes: H10K 85/40 Organosilicon compounds, e.g. TIPS pentacene
• CPC Class Codes: H10K 85/6576 comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene

Abstract

The purpose of the present invention is to provide: an organic semiconductor composition suitable for preparing an organic thin film by a solution method, an organic thin film obtained by using the organic semiconductor composition, and a practical field effect transistor which uses the organic thin film. The practical field effect transistor which uses the organic thin film has small variances in mobility and a threshold value, while maintaining a high mobility. Disclosed in the present specification is an organic semiconductor composition including an organic semiconductor compound, an insulation compound, an organic solvent A, which is a good solvent for the insulation compound, and an organic solvent B, which is a poor solvent for the insulation compound and has a higher boiling point than the organic solvent A. The mass ratio a:b of the organic solvent A and the organic solvent B is 1:8 to 8:1.

Claims

1. An organic semiconductor composition comprising

an organic semiconductor compound,

an insulation compound,

an organic solvent A which is a good solvent for the insulation compound, and

an organic solvent B which is a poor solvent for the insulation compound and has a higher boiling point than the organic solvent A,

wherein the content mass ratio a:

b of the organic solvent A and the organic solvent B is 1;

8 to 8;

1.

2. The organic semiconductor composition according to claim 1,

wherein the organic semiconductor compound is a compound having an acene structure, a phenacene structure, or a heteroacene structure.

3. The organic semiconductor composition according to claim 2,

wherein the compound having the heteroacene structure is a compound having a thienothiophene structure.

4. The organic semiconductor composition according to claim 1,

wherein the insulation compound is a compound having a following repeating unit of formula (1) or (2):

5. The organic semiconductor composition according claim 4,

wherein the organic solvent A is a solvent comprising a compound having an ether group, a ketone group, or an ester group, and the organic solvent B is a solvent comprising a hydrocarbon compound.

6. The organic semiconductor composition according to claim 5,

wherein both the organic solvent A and the organic solvent B are solvents comprising an aromatic compound.

7. The organic semiconductor composition according claim 1,

wherein the insulation compound is a compound having a following repeating unit of formula (3):

8. The organic semiconductor composition according to claim 7,

wherein the organic solvent A is a solvent comprising a hydrocarbon compound, and the organic solvent B is a solvent comprising an ether group, a ketone group, or an ester group.

9. The organic semiconductor composition according to claim 8,

wherein both the organic solvent A and the organic solvent B are solvents comprising a compound having an aromatic compound.

10. The organic semiconductor composition according to claim 1,

wherein a difference of boiling points between the organic solvent A and the organic solvent B is 10°

C. or more.

11. The organic semiconductor composition according to claim 10,

wherein the difference of the boiling points between the organic solvent A and the organic solvent B is 130°

C. or less.

12. The organic semiconductor composition according to claim 1,

wherein both solubility of the organic semiconductor compound in the organic solvent A and solubility of the organic semiconductor compound in the organic solvent B are 0.2% by mass or more.

13. The organic semiconductor composition according to claim 1,

wherein solubility of the insulation compound in the organic solvent A is 0.5% by mass or more and solubility of the insulation compound in the organic solvent B is 0.05% by mass or less.

14. The organic semiconductor composition according to claim 1,

wherein a difference of a hydrogen bonding term in a Hansen solubility parameter between the organic solvent A and the insulation compound is 2.5 cal/cm³ or less, and a difference of a hydrogen bonding term in a Hansen solubility parameter between the organic solvent B and the insulation compound is 2.0 cal/cm³ or more.

15. The organic semiconductor composition according to claim 14,

wherein the difference of the hydrogen bonding term in the Hansen solubility parameter between the organic solvent B and the insulation compound is 5.0 cal/cm³ or less.

16. The organic semiconductor composition according to claim 1,

wherein the content mass ratio a:

b of the organic solvent A and the organic solvent B is 1;

5 to 5;

1.

17. The organic semiconductor composition according to claim 16,

wherein the content mass ratio a:

b of the organic solvent A and the organic solvent B is 1;

5 to 2;

1.

18. The organic semiconductor composition according to claim 1,

wherein the content of the insulation compound based on the total amount of the organic semiconductor compound and the insulation compound is 1 to 80% by mass.

19. The organic semiconductor composition according to claim 18,

wherein the content of the insulation compound based on the total amount of the organic semiconductor compound and the insulation compound is 1 to 15% by mass.

20. An organic thin film obtained by using the organic semiconductor composition according to claim 1.

21. An organic thin film transistor having the organic thin film according to claim 20.