OPTOELECTRONIC DEVICES BASED ON HALIDE PEROVSKITES PASSIVATED WITH 2 DIMENSIONAL MATERIALS

• US 20200136073A1
• Filed: 04/17/2019
• Published: 04/30/2020
• Est. Priority Date: 10/29/2018
• Status: Abandoned Application

• Current Assignee: Korea Advanced Institute of Science and Technology
• Original Assignee: Korea Advanced Institute of Science and Technology
• Inventors: KIM, In Soo, LEE, Kwan Il, LEE, Sang Bae, LEE, Wonsuk
• Application Number:
  US16/386,264
• Publication Number:
  US 20200136073A1
• Time in Patent Office: Days
• CPC Class Codes: H10K 30/10 comprising heterojunctions between organic semiconductors and inorganic semiconductors
• CPC Class Codes: H10K 30/151 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
• CPC Class Codes: H10K 30/152 the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO
• CPC Class Codes: H10K 30/50 Photovoltaic [PV] devices
• CPC Class Codes: H10K 30/88 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 85/1135 Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
• CPC Class Codes: H10K 85/215 comprising substituents, e.g. PCBM
• CPC Class Codes: H10K 85/50 Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
• CPC Class Codes: H10K 85/60 Organic compounds having low molecular weight H10K85/10 - H10K85/50 take precedence
• CPC Class Codes: H10K 85/633 comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
• CPC Class Codes: Y02E 10/549 Organic PV cells

Abstract

Embodiments relate to an optoelectronic device including a substrate, a photoactive layer formed on the substrate to receive light and generate an electron-hole pair, an electron transport layer and a hole transport layer formed on both surfaces of the photoactive layer, a first electrode formed between the substrate and the photoactive layer, and a passivation layer formed at an opposite side to the first electrode on the photoactive layer.

Claims

1. An optoelectronic device, comprising:

a substrate;

a photoactive layer formed on the substrate to receive light and generate an electron-hole pair;

an electron transport layer and a hole transport layer formed on both surfaces of the photoactive layer;

a first electrode formed between the substrate and the photoactive layer; and

a passivation layer formed at an opposite side to the first electrode on the photoactive layer.

2. The optoelectronic device according to claim 1, wherein the passivation layer is made of a 2-dimensional material, and is configured to capture a type of charge of the hole-electron pair generated in the photoactive layer.

3. The optoelectronic device according to claim 1, comprising:

a first electrode formed on the substrate to capture an electron;

an electron transport layer formed on the first electrode;

a photoactive layer formed on the electron transport layer;

a hole transport layer formed on the photoactive layer; and

a passivation layer formed on the hole transport layer, wherein the passivation layer is made of a 2-dimensional material.

4. The optoelectronic device according to claim 3, wherein the passivation layer is made of a material including graphene.

5. The optoelectronic device according to claim 3, wherein the passivation layer is configured to capture the hole of the electron-hole pair generated in the photoactive layer through the hole transport layer.

6. The optoelectronic device according to claim 5, wherein the passivation layer can act as a second electrode of the optoelectronic device.

7. The optoelectronic device according to claim 1, comprising:

a first electrode formed on the substrate to capture an electron;

an electron transport layer formed on the first electrode;

a photoactive layer formed on the electron transport layer;

a hole transport layer formed on the photoactive layer;

a passivation layer formed on the hole transport layer and made of a 2-dimensional material; and

a third electrode formed on the passivation layer,

wherein the third electrode is made of metal.

8. The optoelectronic device according to claim 7, wherein the passivation layer is made of a material including graphene oxide.

9. The optoelectronic device according to claim 7, wherein the passivation layer can receive a hole generated in the photoactive layer through the hole transport layer, and transport the hole to the third electrode.

10. The optoelectronic device according to claim 7, wherein the metal of the third electrode has a higher work function than a work function of graphene oxide.

11. The optoelectronic device according to claim 7, wherein the graphene oxide of the passivation layer is formed by ozone cleaning or oxygen plasma treatment.

12. The optoelectronic device according to claim 1, wherein the photoactive layer is made of a material including a halide perovskite compound.

13. The optoelectronic device according to claim 1, wherein the first electrode is made of a material selected from the group consisting of indium tin oxide (ITO), fluorine doped tin oxide (FTO), tin oxide, zinc oxide and their combinations.

14. The optoelectronic device according to claim 3, wherein the hole transport layer is made of a material including spiro-MeoTAD.

15. The optoelectronic device according to claim 3, wherein the electron transport layer is made of a material selected from the group consisting of TiO₂, ZnO, SnO₂, PC₆₁BM and their combinations.

16. The optoelectronic device according to claim 1, comprising:

a second electrode formed on the substrate to capture a hole;

a hole transport layer formed on the second electrode;

a photoactive layer formed on the hole transport layer;

an electron transport layer formed on the photoactive layer; and

a passivation layer formed on the electron transport layer and made of a 2-dimensional material.

17. The optoelectronic device according to claim 16, wherein the passivation layer can act as a first electrode of the optoelectronic device to capture an electron of an electron-hole pair generated in the photoactive layer through the electron transport layer.

18. The optoelectronic device according to claim 16, wherein the hole transport layer is made of a material including NiOx or PEDOT:

PSS.

19. The optoelectronic device according to claim 16, wherein the electron transport layer is made of a material including a fullerene derivative having a lower conduction band of the photoactive layer than a conduction band of a perovskite solar cell.

20. The optoelectronic device according to claim 19, wherein the electron transport layer is made of a material including PC₆₁BM ([6,6] phenyl-C61-butyric acid methyl ester).