SILICON-BASED DISPLAY PANEL, FORMING METHOD THEREOF, AND PHOTOMASK ASSEMBLY FOR EXPOSURE PROCESS OF SILICON-BASED DISPLAY PANEL

• US 20200136096A1
• Filed: 12/30/2019
• Published: 04/30/2020
• Est. Priority Date: 12/29/2017
• Status: Active Grant

• Current Assignee: Seeya Optronics Company Limited
• Original Assignee: Shanghai Seeo Optronics Technology Co., Ltd.
• Inventors: QIAN, Dong, GU, Tieer, LI, Qi
• Granted Patent: US 11,205,767 B2
• Time in Patent Office: Days
• CPC Class Codes: G03F 7/20 Exposure; Apparatus therefor photographic printing apparatus for making copies G03B27/00
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/166 using selective deposition, e.g. using a mask
• CPC Class Codes: H10K 71/231 by etching of existing layers
• CPC Class Codes: H10K 71/60 Forming conductive regions or layers, e.g. electrodes

Abstract

A forming method for a silicon-based display panel includes providing a silicon substrate having a display region and a peripheral region surrounding the display region, providing a first set of photomasks corresponding to the display region, using the first set of photo masks in an exposure process of the display region, providing a second set of photomasks corresponding to the peripheral region, and using the second set of photomasks in an exposure process of the peripheral region. The exposure process of the display region and the exposure process of the peripheral region are different process steps. According to the forming method for the silicon-based display panel, splicing of pixel patterns in the display region is not carried out, so that the yield and the display effect are improved.

Claims

1. A forming method for a silicon-based display panel, the method comprising:

providing a silicon substrate comprising a display region and a peripheral region surrounding the display region;

providing a first set of photomasks corresponding to the display region, the first set of photomasks being used in an exposure process for the display region; and

providing a second set of photomasks corresponding to the peripheral region, the second set of photomasks being used in an exposure process for the peripheral region,

wherein the exposure process of the display region and the exposure process of the peripheral region are different process steps.

2. The forming method for a silicon-based display panel according to claim 1, wherein an area of the display region is smaller than or equal to an effective exposure area of an exposure machine.

3. The forming method for a silicon-based display panel according to claim 1, wherein

the peripheral region includes a plurality of peripheral circuits;

the second set of photomasks is provided with a plurality of peripheral circuit patterns corresponding to the plurality of peripheral circuits; and

the plurality of peripheral circuit patterns is compact and spaced apart from one another.

4. The forming method for a silicon-based display panel according to claim 1, wherein

a first wiring is formed in the display region by using the first set of photomasks;

a second wiring is formed in the peripheral region by using the second set of photomasks; and

a width of the first wiring is smaller than or equal to a width of the second wiring.

5. The forming method for a silicon-based display panel according to claim 4, wherein the first wiring and the second wiring are electrically connected to each other in such a manner that pixel units in the display region are in communication with circuits in the peripheral region.

6. The forming method for a silicon-based display panel according to claim 1, wherein the first set of photomasks comprises a plurality of photomasks corresponding to an N-well exposure process, a P-well exposure process, a shallow trench isolation exposure process, a P-well V_T adjust exposure process, an N-well V_T adjust exposure process, a gate exposure process, an N-LDD exposure process, an N-channel source/drain exposure process, a P-channel source/drain exposure process, a salicide block exposure process, a high resistance polysilicon resistor exposure process, a contact hole exposure process, a first metal layer exposure process, a via hole exposure process, and a second metal layer exposure process of the display region, respectively;

and

the second set of photomasks comprises a plurality of photomasks corresponding to an N-well exposure process, a P-well exposure process, a shallow trench isolation exposure process, a P-well V_T adjust exposure process, an N-well V_T adjust exposure process, a gate exposure process, an N-LDD exposure process, an N-channel source/drain exposure process, a P-channel source/drain exposure process, a salicide block exposure process, a high resistance polysilicon resistor exposure process, a contact hole exposure process, a first metal layer exposure process, a via hole exposure process, and a second metal layer exposure process of the peripheral region, respectively.

7. The forming method for a silicon-based display panel according to claim 6, wherein

the exposure process for the display region and the exposure process for the peripheral region are successively completed in adjacent sequential process steps;

or

the exposure process for the peripheral region and the exposure process for the display region are successively completed in adjacent sequential process steps.

8. The forming method for a silicon-based display panel according to claim 6, wherein

the forming method further comprises a cleaning process, a photoresist coating process, and a photoresist curing process, prior to the exposure process steps, and a development process and a photoresist stripping process posterior to the exposure process steps;

and

the cleaning process, the photoresist coating process, the photoresist curing process, the development process, and the photoresist stripping process of the display region and the peripheral region are performed respectively in a same process step.

9. The forming method for a silicon-based display panel according to claim 6, wherein

the forming method further comprises an insulating layer forming process, an insulating layer etching process, an ion implantation process, a metal layer forming process, and a metal layer etching process;

and

the insulating layer forming process, the insulating layer etching process, the ion implantation process, the metal layer forming process, and the metal layer etching process of the display region and the peripheral region are performed respectively in a same processing step.

10. A silicon-based display panel, comprising

a display region and

a peripheral region surrounding the display region,

wherein an area of the display region is smaller than or equal to an effective exposure area of an exposure machine, and an exposure process of the display region and an exposure process of the peripheral region are performed in different process steps.

11. The silicon-based display panel according to claim 10, further comprising an OLED display layer, wherein the OLED display layer is disposed in the display region.

12. A photomask assembly for an exposure process of a silicon-based display panel, the photomask assembly comprising:

a first set of photomasks and

a second set of photomasks,

wherein the first set of photomasks corresponds to a display region of the silicon-based display panel and the second set of photomasks corresponds to a peripheral region of the silicon-based display panel.

13. The photomask assembly according to claim 12, wherein

an area of a pattern of the display region corresponding to the first set of photomasks is smaller than or equal to an effective exposure area of an exposure machine;

the second set of photomasks is provided with a plurality of circuit patterns, the plurality of circuit patterns is compact and spaced apart from one another; and

a total area occupied by the plurality of circuit patterns is smaller than or equal to the effective exposure area of the exposure machine.

14. The photomask assembly according to claim 12, wherein the first set of photomasks comprises a plurality of photomasks including a photomask for an N-well exposure process, a photomask for a P-well exposure process, a photomask for a shallow trench isolation exposure process, a photomask for a P-well V_T adjust exposure process, a photomask for an N-well V_T adjust exposure process, a photomask for a gate exposure process, a photomask for an N-LDD exposure process, a photomask for an N-channel source/drain exposure process, a photomask for a P-channel source/drain exposure process, a photomask for a salicide block exposure process, a photomask for a high resistance polysilicon resistor exposure process, a photomask for a contact hole exposure process, a photomask for a first metal layer exposure process, a photomask for a via hole exposure process, and a photomask for a second metal layer exposure process of the display region, respectively.

15. The photomask assembly according to claim 12, wherein the second set of photomasks comprises a plurality of photomasks including a photomask for an N-well exposure process, a photomask for a P-well exposure process, a photomask for a shallow trench isolation exposure process, a photomask for a P-well V_T adjust exposure process, a photomask for an N-well V_T adjust exposure process, a photomask for a gate exposure process, a photomask for an N-LDD exposure process, a photomask for an N-channel source/drain exposure process, a photomask for a P-channel source/drain exposure process, a photomask for a salicide block exposure process, a photomask for a high resistance polysilicon resistor exposure process, a photomask for a contact hole exposure process, a photomask for a first metal layer exposure process, a photomask for a via hole exposure process, and a photomask for a second metal layer exposure process of the peripheral region, respectively.